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                >MA4E2508M>規(guī)格書(shū)列表
                
          
            
          
                
          
                    
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          MA4E2508M
          SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
          
Description
The MA4E2508 SURMOUNTTM Anti-Parallel Diode Series are Silicon Low, Medium, & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedde
          文件：103.45 Kbytes 頁(yè)數(shù)：4 Pages
          MA-COM
          

          MA4E2508M
          SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
          
Description and Applications
The MA4E2508 SurMount? Anti-Parallel Diode Series are Silicon Low, Medium & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via con
          文件：102.34 Kbytes 頁(yè)數(shù)：4 Pages
          MACOM
          

          MA4E2508M
          SURMOUNT Low, Medium, & High Barrier Silicon
          文件：224.73 Kbytes 頁(yè)數(shù)：5 Pages
          MA-COM
          

          MA4E2508M-1112
          SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
          
Description
The MA4E2508 SURMOUNTTM Anti-Parallel Diode Series are Silicon Low, Medium, & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedde
          文件：103.45 Kbytes 頁(yè)數(shù)：4 Pages
          MA-COM
          

          MA4E2508M-1112W
          SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
          
Description
The MA4E2508 SURMOUNTTM Anti-Parallel Diode Series are Silicon Low, Medium, & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedde
          文件：103.45 Kbytes 頁(yè)數(shù)：4 Pages
          MA-COM
          

          MA4E2508MSP-T
          SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
          
Description
The MA4E2508 SURMOUNTTM Anti-Parallel Diode Series are Silicon Low, Medium, & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedde
          文件：103.45 Kbytes 頁(yè)數(shù)：4 Pages
          MA-COM
          

          MA4E2508M-1112
          Med. Barrier Anti-Parallel Si
          The MA4E2508 SURMOUNTTM Anti-Parallel Diode Series are Silicon Low, Medium, & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC?) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele  ·Extremely Low Parasitic Capitance & Inductance\n·Lower Susceptibility to ESD Damage\n·Reliable, Multilayer Metalization with a Diffusion Barrier, 100 % Stabilization Bake (300°C, 16 hours)\n·Rugged HMIC? Construction with polyimide Scratch Protection\n·Surface Mountable in Microwave Circuits, N;
          MACOM
          

          MA4E2508M-1112
          Package：模具；包裝：托盤(pán) 類(lèi)別：分立半導(dǎo)體產(chǎn)品 二極管 - 射頻 描述：SCHOTTKY,SURMOUNT,ANTI-PAR,MED B
          MACOM Technology Solutions
          MACOM Technology Solutions
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • Vf(V)：
            0.4200
          • Vb：
            5.00
          • Total Capacitance(pF)：
            0.240
          • Dynamic Resistance(ohms)：
            12.0
          • Junction Capacitance(pF)：
            0.240
          • Package Category：
            Surface Mount Die
          • Package：
            ODS-1112
          
            
          
        
          
            
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