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          MA4E2508L
          SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
          
Description
The MA4E2508 SURMOUNTTM Anti-Parallel Diode Series are Silicon Low, Medium, & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedde
          文件：103.45 Kbytes 頁(yè)數(shù)：4 Pages
          MA-COM
          

          MA4E2508L
          SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
          
Description and Applications
The MA4E2508 SurMount? Anti-Parallel Diode Series are Silicon Low, Medium & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via con
          文件：102.34 Kbytes 頁(yè)數(shù)：4 Pages
          MACOM
          

          MA4E2508L
          SURMOUNT Low, Medium, & High Barrier Silicon
          文件：224.73 Kbytes 頁(yè)數(shù)：5 Pages
          MA-COM
          

          MA4E2508L-1112
          SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
          
Description
The MA4E2508 SURMOUNTTM Anti-Parallel Diode Series are Silicon Low, Medium, & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedde
          文件：103.45 Kbytes 頁(yè)數(shù)：4 Pages
          MA-COM
          

          MA4E2508L-1112T
          SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
          
Description
The MA4E2508 SURMOUNTTM Anti-Parallel Diode Series are Silicon Low, Medium, & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedde
          文件：103.45 Kbytes 頁(yè)數(shù)：4 Pages
          MA-COM
          

          MA4E2508L-1112W
          SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
          
Description
The MA4E2508 SURMOUNTTM Anti-Parallel Diode Series are Silicon Low, Medium, & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedde
          文件：103.45 Kbytes 頁(yè)數(shù)：4 Pages
          MA-COM
          

          MA4E2508L-1112
          High Barrier Anti-Parallel Si
          MACOM’s MASWSS0161 is a GaAs MMIC SPDT switch in a lead free SOIC-8 lead surface mount plastic package. The MASWSS0161 is ideally suited for use where low power consumption is required. Typical applications include transmit/receive switching, switch matrices and switched filter banks in systems such  ·Positive Supply and Control Voltages\n·RoHS* Compliant Version of SW-277\n·260°C Re-flow Compatible\n·Halogen-Free “Green” Mold Compound\n·100% Matte Tin Plating over Copper\n·Lead-Free SOIC-8 Plastic Package\n·Fast Switching Speed\n·Low Power Consumption: 100 μW\n·Low Insertion Loss: 0.4 dB Ty;
          MACOM
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • Vf(V)：
            -1.7000
          • Vb：
            5.00
          • Total Capacitance(pF)：
            0.240
          • Dynamic Resistance(ohms)：
            16.0
          • Junction Capacitance(pF)：
            0.240
          • Package Category：
            Surface Mount Die
          • Package：
            ODS-1112
          
            
          
        
          
            
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