HEX INVERTER OPEN DRAIN

DESCRIPTION The M74HC05 is an high speed CMOS HEX INVERTER (OPEN DRAIN) fabricated with silicon gate C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits a

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STMICROELECTRONICS

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HEX INVERTER OPEN DRAIN

DESCRIPTION The M54/74HC05 is a high speed CMOS HEX OPEN DRAIN INVERTER fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 3 stages including buffer output, which enables

文件：227.59 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

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HEX INVERTER OPEN DRAIN

DESCRIPTION The M74HC05 is an high speed CMOS HEX INVERTER (OPEN DRAIN) fabricated with silicon gate C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits a

文件：168.03 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

意法半導(dǎo)體

HEX INVERTER OPEN DRAIN

DESCRIPTION The M74HC05 is an high speed CMOS HEX INVERTER (OPEN DRAIN) fabricated with silicon gate C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits a

文件：168.03 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

意法半導(dǎo)體

HEX BUFFER OPEN DRAIN

DESCRIPTION The M74HC07 is an high speed CMOS HEX OPEN DRAIN BUFFER fabricated with silicon gate C2MOS technology. The internal circuit is composed of 2 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits ag

文件：227.4 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

HEX BUFFER OPEN DRAIN

DESCRIPTION The M54/74HC07 is a high speed CMOS HEX OPEN DRAIN BUFFER fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 2 stages including buffer output, which enables hi

文件：227.81 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

HEX BUFFER OPEN DRAIN

DESCRIPTION The M74HC07 is an high speed CMOS HEX OPEN DRAIN BUFFER fabricated with silicon gate C2MOS technology. The internal circuit is composed of 2 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits ag

文件：227.4 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

HEX BUFFER OPEN DRAIN

DESCRIPTION The M54/74HC07 is a high speed CMOS HEX OPEN DRAIN BUFFER fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 2 stages including buffer output, which enables hi

文件：227.81 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

HEX BUFFER OPEN DRAIN

DESCRIPTION The M54/74HC07 is a high speed CMOS HEX OPEN DRAIN BUFFER fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 2 stages including buffer output, which enables hi

文件：227.81 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

HEX BUFFER OPEN DRAIN

DESCRIPTION The M54/74HC07 is a high speed CMOS HEX OPEN DRAIN BUFFER fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 2 stages including buffer output, which enables hi

文件：227.81 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體