| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal for memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer metalization process technology and a single-transi 文件：296.53 Kbytes 頁數(shù)：29 Pages | MITSUBISHI 三菱電機 | MITSUBISHI | ||
FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal for memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer metalization process technology and a single-transi 文件：296.53 Kbytes 頁數(shù)：29 Pages | MITSUBISHI 三菱電機 | MITSUBISHI | ||
FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal for memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer metalization process technology and a single-transi 文件：296.53 Kbytes 頁數(shù)：29 Pages | MITSUBISHI 三菱電機 | MITSUBISHI | ||
FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal for memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer metalization process technology and a single-transi 文件：296.53 Kbytes 頁數(shù)：29 Pages | MITSUBISHI 三菱電機 | MITSUBISHI | ||
FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal for memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer metalization process technology and a single-transi 文件：296.53 Kbytes 頁數(shù)：29 Pages | MITSUBISHI 三菱電機 | MITSUBISHI | ||
FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal for memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer metalization process technology and a single-transi 文件：296.53 Kbytes 頁數(shù)：29 Pages | MITSUBISHI 三菱電機 | MITSUBISHI | ||
FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal for memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer metalization process technology and a single-transi 文件：296.53 Kbytes 頁數(shù)：29 Pages | MITSUBISHI 三菱電機 | MITSUBISHI | ||
FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal for memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer metalization process technology and a single-transi 文件：296.53 Kbytes 頁數(shù)：29 Pages | MITSUBISHI 三菱電機 | MITSUBISHI | ||
FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal for memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer metalization process technology and a single-transi 文件：296.53 Kbytes 頁數(shù)：29 Pages | MITSUBISHI 三菱電機 | MITSUBISHI | ||
FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal for memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer metalization process technology and a single-transi 文件：296.53 Kbytes 頁數(shù)：29 Pages | MITSUBISHI 三菱電機 | MITSUBISHI |
詳細參數(shù)
- 型號：
M5M
- 制造商：
MITSUBISHI
- 制造商全稱：
Mitsubishi Electric Semiconductor
- 功能描述：
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MIT |
25+ |
SOP-14 |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
MIT |
25+ |
CDIP40 |
3629 |
原裝優(yōu)勢!房間現(xiàn)貨!歡迎來電! |
詢價 | ||
MIT |
1824+ |
DIP40 |
3108 |
原裝現(xiàn)貨專業(yè)代理,可以代拷程序 |
詢價 | ||
MIT |
23+ |
DIP |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
M5L |
25+ |
QFP |
3200 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售! |
詢價 | ||
MIT |
06+ |
原廠原裝 |
4283 |
只做全新原裝真實現(xiàn)貨供應 |
詢價 | ||
MIT |
24+/25+ |
29 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
M5L |
24+ |
DIP |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
MITSUBI |
23+ |
CDIP鏡 |
8560 |
受權代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
MIT |
24+ |
CDIP40 |
20000 |
全新原廠原裝，進口正品現(xiàn)貨，正規(guī)渠道可含稅??！ |
詢價 |
相關規(guī)格書
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