8 UNIT 400MA DARLINGTON TRANSISTOR ARRAY

文件：175.43 Kbytes 頁數(shù)：3 Pages

MITSUBISHI

三菱電機

8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

DESCRIPTION\nM54583P and M54583FP are eight-circuit collector-current synchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.FEATURES\n●High breakdown ●High breakdown voltage (BVCEO ≥50V)\n●High-current driving (Ic(max) = 400mA)\n●Active L-level input\n●With input clamping diodes\n\nAPPLICATION\nInterfaces between microcomputers and high-voltage, high current drive systems, drives of relays and printers, and MOS-bipolar logic IC interfaces;

MinebeaMitsumi

美蓓亞三美

8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

文件：86.01 Kbytes 頁數(shù)：4 Pages

MITSUBISHI

三菱電機

8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY SINK TYPE

文件：315.01 Kbytes 頁數(shù)：6 Pages

MITSUBISHI

三菱電機

8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

文件：86.01 Kbytes 頁數(shù)：4 Pages

MITSUBISHI

三菱電機

8 UNIT 400MA DARLINGTON TRANSISTOR ARRAY

文件：175.43 Kbytes 頁數(shù)：3 Pages

MITSUBISHI

三菱電機

8-UNIT 400mA DARLIGNON TRANSISTOR ARRAY

文件：230.69 Kbytes 頁數(shù)：5 Pages

MITSUBISHI

三菱電機

8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY SINK TYPE

DESCRIPTION\nM54583FP is eight-circuit collector-current sink type Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.\n\nFEATURES\n●High breakdown voltage (BV ●High breakdown voltage (BVCEO 50V)\n●High-current driving (IC(max) = 400mA)\n●Active L-level input\n●With input clamping diodes;

MinebeaMitsumi

美蓓亞三美

晶體管陣列

·晶體管陣列是通過微小電流對大電流進行控制的半導體集成電路。眾多的產品系列(50mA~1.5A/35V~50V)廣泛應用于各種領域。同時由于采用表面封裝技術，使產品的小型化、輕量化和高密度化變?yōu)榭赡堋?

MITSUBISHI

三菱電機