8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

DESCRIPTION M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input current supply. FEATURES ? High breakdown voltage (

文件：81.67 Kbytes 頁(yè)數(shù)：4 Pages

MITSUBISHI

三菱電機(jī)

8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

MITSUBISHI

三菱電機(jī)

8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE

DESCRIPTION M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input current supply. FEATURES ? High breakdown voltage (

文件：274.46 Kbytes 頁(yè)數(shù)：6 Pages

MITSUBISHI

三菱電機(jī)

8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

DESCRIPTION M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input current supply. FEATURES ? High breakdown voltage (

文件：81.67 Kbytes 頁(yè)數(shù)：4 Pages

MITSUBISHI

三菱電機(jī)

8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

DESCRIPTION M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input current supply. FEATURES ? High breakdown voltage (

文件：81.67 Kbytes 頁(yè)數(shù)：4 Pages

MITSUBISHI

三菱電機(jī)

8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

文件：89.7 Kbytes 頁(yè)數(shù)：4 Pages

MITSUBISHI

三菱電機(jī)

8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

文件：210.71 Kbytes 頁(yè)數(shù)：5 Pages

MITSUBISHI

三菱電機(jī)

8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

DESCRIPTION\nM54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input current supply.FEATURES\n? High breakdown voltage (BVCE ? High breakdown voltage (BVCEO ≥ 50V)\n? High-current driving (Io(max) = –500mA)\n? With output clamping diodes\n? Driving available with PMOS IC output of 6 ~ 16V or with TTL output\n? Wide operating temperature range (Ta = –20 to +75°C)\n? Output current-sourcing typeAPPLICATION\n? Drives of rela;

MinebeaMitsumi

美蓓亞三美

晶體管陣列

·晶體管陣列是通過(guò)微小電流對(duì)大電流進(jìn)行控制的半導(dǎo)體集成電路。眾多的產(chǎn)品系列(50mA~1.5A/35V~50V)廣泛應(yīng)用于各種領(lǐng)域。同時(shí)由于采用表面封裝技術(shù)，使產(chǎn)品的小型化、輕量化和高密度化變?yōu)榭赡堋?

MITSUBISHI

三菱電機(jī)