M48 4800 baud RS232 Radio Modem application board

文件：427.29 Kbytes 頁(yè)數(shù)：12 Pages

RADIOMETRIX

絲?。?strong>M48；Package：SOT-23；TVS Diode Array

文件：312.18 Kbytes 頁(yè)數(shù)：3 Pages

LEIDITECH

雷卯電子

DDR SDRAM SODIMM

200Pin Non ECC / ECC SODIMM based on 256Mb F-die(x16) Feature ? Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V ? Double-data-rate architecture; two data transfers per clock cycle ? Bidirectional data strobe(DQS) ? Differential clock inputs(CK and CK) ? DLL aligns DQ and DQS transition wi

文件：264.05 Kbytes 頁(yè)數(shù)：20 Pages

SAMSUNG

三星

DDR SDRAM SODIMM

200Pin Non ECC / ECC SODIMM based on 256Mb F-die(x16) Feature ? Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V ? Double-data-rate architecture; two data transfers per clock cycle ? Bidirectional data strobe(DQS) ? Differential clock inputs(CK and CK) ? DLL aligns DQ and DQS transition wi

文件：264.05 Kbytes 頁(yè)數(shù)：20 Pages

SAMSUNG

三星

DDR SDRAM SODIMM

200Pin Non ECC / ECC SODIMM based on 256Mb F-die(x16) Feature ? Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V ? Double-data-rate architecture; two data transfers per clock cycle ? Bidirectional data strobe(DQS) ? Differential clock inputs(CK and CK) ? DLL aligns DQ and DQS transition wi

文件：264.05 Kbytes 頁(yè)數(shù)：20 Pages

SAMSUNG

三星

DDR SDRAM SODIMM

200Pin Non ECC / ECC SODIMM based on 256Mb F-die(x16) Feature ? Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V ? Double-data-rate architecture; two data transfers per clock cycle ? Bidirectional data strobe(DQS) ? Differential clock inputs(CK and CK) ? DLL aligns DQ and DQS transition wi

文件：264.05 Kbytes 頁(yè)數(shù)：20 Pages

SAMSUNG

三星

DDR SDRAM SODIMM

Feature ? Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V ? Double-data-rate architecture; two data transfers per clock cycle ? Bidirectional data strobe(DQS) ? Differential clock inputs(CK and CK) ? DLL aligns DQ and DQS transition with CK transition ? Programmable Read latency 2, 2.5 (c

文件：264.46 Kbytes 頁(yè)數(shù)：20 Pages

SAMSUNG

三星

DDR SDRAM SODIMM

Feature ? Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V ? Double-data-rate architecture; two data transfers per clock cycle ? Bidirectional data strobe(DQS) ? Differential clock inputs(CK and CK) ? DLL aligns DQ and DQS transition with CK transition ? Programmable Read latency 2, 2.5 (c

文件：264.46 Kbytes 頁(yè)數(shù)：20 Pages

SAMSUNG

三星

DDR SDRAM SODIMM

Feature ? Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V ? Double-data-rate architecture; two data transfers per clock cycle ? Bidirectional data strobe(DQS) ? Differential clock inputs(CK and CK) ? DLL aligns DQ and DQS transition with CK transition ? Programmable Read latency 2, 2.5 (c

文件：264.46 Kbytes 頁(yè)數(shù)：20 Pages

SAMSUNG

三星

16 Kbit 2Kb x8 TIMEKEEPER[ SRAM

DESCRIPTION The M48T02,12 TIMEKEEPER? RAM is a 2K x 8 non-volatile static RAM and real time clock which is pin and functional compatible with the MK48T02,12. ■ INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK and POWER-FAIL CONTROL CIRCUIT ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD

文件：94.27 Kbytes 頁(yè)數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體