16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface

Description The M45PE16 is a 16Mbit (2M x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

文件：396.39 Kbytes 頁數(shù)：45 Pages

STMICROELECTRONICS

意法半導(dǎo)體

16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface

Description The M45PE16 is a 16Mbit (2M x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

文件：396.39 Kbytes 頁數(shù)：45 Pages

STMICROELECTRONICS

意法半導(dǎo)體

16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface

Description The M45PE16 is a 16Mbit (2M x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

文件：396.39 Kbytes 頁數(shù)：45 Pages

STMICROELECTRONICS

意法半導(dǎo)體

16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface

Description The M45PE16 is a 16Mbit (2M x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

文件：396.39 Kbytes 頁數(shù)：45 Pages

STMICROELECTRONICS

意法半導(dǎo)體