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          首頁 >M30>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          M30162040108X0IWAR

          High Performance Serial MRAM Memory

          Features ? Interface ? Serial Peripheral Interface QSPI (4-4-4) ? Single Data Rate Mode: 108MHz ? Double Data Rate Mode: 54MHz ? Technology ? 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31) ? Density ? 4Mb,

          文件:1.14047 Mbytes 頁數(shù):52 Pages

          RENESAS

          瑞薩

          M30162040108X0IWAY

          High Performance Serial MRAM Memory

          Features ? Interface ? Serial Peripheral Interface QSPI (4-4-4) ? Single Data Rate Mode: 108MHz ? Double Data Rate Mode: 54MHz ? Technology ? 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31) ? Density ? 4Mb,

          文件:1.14047 Mbytes 頁數(shù):52 Pages

          RENESAS

          瑞薩

          M30162040108X0PSAR

          High Performance Serial MRAM Memory

          Features ? Interface ? Serial Peripheral Interface QSPI (4-4-4) ? Single Data Rate Mode: 108MHz ? Double Data Rate Mode: 54MHz ? Technology ? 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31) ? Density ? 4Mb,

          文件:1.14047 Mbytes 頁數(shù):52 Pages

          RENESAS

          瑞薩

          M30162040108X0PSAY

          High Performance Serial MRAM Memory

          Features ? Interface ? Serial Peripheral Interface QSPI (4-4-4) ? Single Data Rate Mode: 108MHz ? Double Data Rate Mode: 54MHz ? Technology ? 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31) ? Density ? 4Mb,

          文件:1.14047 Mbytes 頁數(shù):52 Pages

          RENESAS

          瑞薩

          M30162040108X0PWAR

          High Performance Serial MRAM Memory

          Features ? Interface ? Serial Peripheral Interface QSPI (4-4-4) ? Single Data Rate Mode: 108MHz ? Double Data Rate Mode: 54MHz ? Technology ? 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31) ? Density ? 4Mb,

          文件:1.14047 Mbytes 頁數(shù):52 Pages

          RENESAS

          瑞薩

          M30162040108X0PWAY

          High Performance Serial MRAM Memory

          Features ? Interface ? Serial Peripheral Interface QSPI (4-4-4) ? Single Data Rate Mode: 108MHz ? Double Data Rate Mode: 54MHz ? Technology ? 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31) ? Density ? 4Mb,

          文件:1.14047 Mbytes 頁數(shù):52 Pages

          RENESAS

          瑞薩

          M3016316035NX

          Parallel MRAM Memory x16

          Features ? Interface ? Parallel Asynchronous x16 ? Technology ? 40nm pMTJ STT-MRAM ? Data Retention (see Table 16. Endurance and Data Retention Density) ? 4Mb, 8Mb, 16Mb, 32Mb ? Operating Voltage Range ? VCC: 2.70V – 3.60V ? Operating Temperature Range ? Industrial: -40°C to 85°C ? Ind

          文件:673.75 Kbytes 頁數(shù):26 Pages

          RENESAS

          瑞薩

          M3016316035NX0IBCR

          Parallel MRAM Memory x16

          Features ? Interface ? Parallel Asynchronous x16 ? Technology ? 40nm pMTJ STT-MRAM ? Data Retention (see Table 16. Endurance and Data Retention Density) ? 4Mb, 8Mb, 16Mb, 32Mb ? Operating Voltage Range ? VCC: 2.70V – 3.60V ? Operating Temperature Range ? Industrial: -40°C to 85°C ? Ind

          文件:673.75 Kbytes 頁數(shù):26 Pages

          RENESAS

          瑞薩

          M3016316035NX0IBCY

          Parallel MRAM Memory x16

          Features ? Interface ? Parallel Asynchronous x16 ? Technology ? 40nm pMTJ STT-MRAM ? Data Retention (see Table 16. Endurance and Data Retention Density) ? 4Mb, 8Mb, 16Mb, 32Mb ? Operating Voltage Range ? VCC: 2.70V – 3.60V ? Operating Temperature Range ? Industrial: -40°C to 85°C ? Ind

          文件:673.75 Kbytes 頁數(shù):26 Pages

          RENESAS

          瑞薩

          M3016316035NX0ITBR

          Parallel MRAM Memory x16

          Features ? Interface ? Parallel Asynchronous x16 ? Technology ? 40nm pMTJ STT-MRAM ? Data Retention (see Table 16. Endurance and Data Retention Density) ? 4Mb, 8Mb, 16Mb, 32Mb ? Operating Voltage Range ? VCC: 2.70V – 3.60V ? Operating Temperature Range ? Industrial: -40°C to 85°C ? Ind

          文件:673.75 Kbytes 頁數(shù):26 Pages

          RENESAS

          瑞薩

          產(chǎn)品屬性

          • 產(chǎn)品編號:

            M30

          • 制造商:

            Semtech Corporation

          • 類別:

            分立半導(dǎo)體產(chǎn)品 > 二極管 - 整流器 - 單

          • 包裝:

            散裝

          • 二極管類型:

            標(biāo)準(zhǔn)

          • 電流 - 平均整流 (Io):

            330mA

          • 速度:

            標(biāo)準(zhǔn)恢復(fù) >500ns,> 200mA(Io)

          • 不同?Vr、F 時電容:

            1.7pF @ 5V,1MHz

          • 安裝類型:

            通孔

          • 封裝/外殼:

            軸向

          • 工作溫度 - 結(jié):

            -65°C ~ 175°C

          • 描述:

            DIODE GEN PURP 3KV 330MA AXIAL

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          更多M30供應(yīng)商 更新時間2026-1-21 9:01:00
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