16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection

DESCRIPTION The M28C16B and M28C17B devices consist of 2048x8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary single polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply. ■Fast A

文件：131.63 Kbytes 頁(yè)數(shù)：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Access Times of 150, 200, 250 and 350ns Single 5V?10 Power Supply

文件：667.93 Kbytes 頁(yè)數(shù)：10 Pages

PYRAMID

Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum

文件：663.98 Kbytes 頁(yè)數(shù)：10 Pages

PYRAMID

16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION

DESCRIPTION The M28C16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V power supply. The circuit has been designed to offer a flexible micro controlle

文件：129.1 Kbytes 頁(yè)數(shù)：18 Pages

STMICROELECTRONICS

意法半導(dǎo)體

16K (2K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m

文件：64.66 Kbytes 頁(yè)數(shù)：8 Pages

MICROCHIP

微芯科技

16K (2K x 8) CMOS EEPROM

文件：125.8 Kbytes 頁(yè)數(shù)：10 Pages

MICROCHIP

微芯科技