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    首頁(yè) >M28256>規(guī)格書(shū)列表

    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

    M28256-15WMS6T

    256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection

    DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep

    文件:132.3 Kbytes 頁(yè)數(shù):21 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    M28256-15WNS1T

    256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection

    DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep

    文件:132.3 Kbytes 頁(yè)數(shù):21 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    M28256-15WNS6T

    256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection

    DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep

    文件:132.3 Kbytes 頁(yè)數(shù):21 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    M28256-20BS1T

    256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection

    DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep

    文件:132.3 Kbytes 頁(yè)數(shù):21 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    M28256-20BS6T

    256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection

    DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep

    文件:132.3 Kbytes 頁(yè)數(shù):21 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    M28256-20KA1T

    256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection

    DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep

    文件:132.3 Kbytes 頁(yè)數(shù):21 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    M28256-20KA6T

    256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection

    DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep

    文件:132.3 Kbytes 頁(yè)數(shù):21 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    M28256-20MS1T

    256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection

    DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep

    文件:132.3 Kbytes 頁(yè)數(shù):21 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    M28256-20MS6T

    256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection

    DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep

    文件:132.3 Kbytes 頁(yè)數(shù):21 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    M28256-20NS1T

    256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection

    DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep

    文件:132.3 Kbytes 頁(yè)數(shù):21 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    詳細(xì)參數(shù)

    • 型號(hào):

      M28256

    • 制造商:

      STMICROELECTRONICS

    • 制造商全稱(chēng):

      STMicroelectronics

    • 功能描述:

      256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection

    供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
    ST
    05+
    原廠(chǎng)原裝
    5801
    只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
    詢(xún)價(jià)
    ST
    00+
    PLCC32
    1572
    特價(jià)銷(xiāo)售歡迎來(lái)電!!
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    ST
    23+
    PLCC
    16900
    正規(guī)渠道,只有原裝!
    詢(xún)價(jià)
    ST
    25+
    PLCC
    16900
    原裝,請(qǐng)咨詢(xún)
    詢(xún)價(jià)
    ST
    2511
    PLCC
    16900
    電子元器件采購(gòu)降本30%!原廠(chǎng)直采,砍掉中間差價(jià)
    詢(xún)價(jià)
    ST
    26+
    PLCC
    60000
    只有原裝 可配單
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    ST
    TSOP28
    49
    全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
    詢(xún)價(jià)
    ST
    24+
    3000
    公司存貨
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    ST
    10+
    DIP
    7800
    全新原裝正品,現(xiàn)貨銷(xiāo)售
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    ST
    23+
    TSSOP-28
    7000
    絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)!
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    更多M28256供應(yīng)商 更新時(shí)間2026-1-21 16:07:00

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