NMOS 512K 64K x 8 UV EPROM

DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

文件：90.27 Kbytes 頁數(shù)：11 Pages

STMICROELECTRONICS

意法半導(dǎo)體

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

文件：93.34 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

文件：109.11 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

256K(32K x 8) UV ERASABLE PROM

256K(32K x 8) UV ERASABLE PROM

文件：554.37 Kbytes 頁數(shù)：9 Pages

INTEL

英特爾

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

文件：93.34 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

文件：109.11 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

文件：93.34 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

文件：109.11 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

NMOS 512K 64K x 8 UV EPROM

DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

文件：90.27 Kbytes 頁數(shù)：11 Pages

STMICROELECTRONICS

意法半導(dǎo)體

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

文件：93.34 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體