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首頁 >M25PE40>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
M25PE40	文件：1.29716 Mbytes Page：62 Pages	4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE40 is a 4 Mbit (512Kbit × 8 bit) serial paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated 文件：1.29716 Mbytes 頁數(shù)：62 Pages	NUMONYX	NUMONYX
M25PE40	文件：482.65 Kbytes Page：60 Pages	4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout Description The is a 4 Mbit (512Kb × 8 bit) Serial Paged Flash memory accessed by a high speed SPIcompatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase c 文件：482.65 Kbytes 頁數(shù)：60 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M25PE40	文件：300 bytes Page：1 Pages	4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout	ST 意法半導(dǎo)體	ST
M25PE40VMN6G	文件：482.65 Kbytes Page：60 Pages	4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout Description The is a 4 Mbit (512Kb × 8 bit) Serial Paged Flash memory accessed by a high speed SPIcompatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase c 文件：482.65 Kbytes 頁數(shù)：60 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M25PE40-VMN6G	文件：1.29716 Mbytes Page：62 Pages	4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE40 is a 4 Mbit (512Kbit × 8 bit) serial paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated 文件：1.29716 Mbytes 頁數(shù)：62 Pages	NUMONYX	NUMONYX
M25PE40VMN6P	文件：482.65 Kbytes Page：60 Pages	4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout Description The is a 4 Mbit (512Kb × 8 bit) Serial Paged Flash memory accessed by a high speed SPIcompatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase c 文件：482.65 Kbytes 頁數(shù)：60 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M25PE40-VMN6P	文件：1.29716 Mbytes Page：62 Pages	4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE40 is a 4 Mbit (512Kbit × 8 bit) serial paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated 文件：1.29716 Mbytes 頁數(shù)：62 Pages	NUMONYX	NUMONYX
M25PE40VMN6TG	文件：482.65 Kbytes Page：60 Pages	4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout Description The is a 4 Mbit (512Kb × 8 bit) Serial Paged Flash memory accessed by a high speed SPIcompatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase c 文件：482.65 Kbytes 頁數(shù)：60 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M25PE40-VMN6TG	文件：1.29716 Mbytes Page：62 Pages	4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE40 is a 4 Mbit (512Kbit × 8 bit) serial paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated 文件：1.29716 Mbytes 頁數(shù)：62 Pages	NUMONYX	NUMONYX
M25PE40VMN6TP	文件：482.65 Kbytes Page：60 Pages	4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout Description The is a 4 Mbit (512Kb × 8 bit) Serial Paged Flash memory accessed by a high speed SPIcompatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase c 文件：482.65 Kbytes 頁數(shù)：60 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS

技術(shù)參數(shù)

Density：
4Mb
FBGA Code：
N/A
Media：
Tube
Op. Temp.：
-40C to +85C
Part Family：
M25PE
Part Status：
Obsolete
PLP：
No
PLP Start Date：
N/A
Type：
Page Erase
Width：
x1

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市弘為電子有限公司	M25PE40	ST	24+	SOP	4260	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市安富世紀(jì)電子有限公司	M25PE40	MICRON	23+	SOP8	500	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	M25PE40	MICRON	22+	SOP8	20000	公司只有原裝品質(zhì)保障	詢價(jià)
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	M25PE40-VMW6G	Micron	17+		6200		詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	M25PE40-VMN6TPB	ST		SOP-8	2500	原裝長期供貨!	詢價(jià)
深圳市凌旭科技有限公司	M25PE40-VMN6TP	ST	2016+	SOP8	6600	只做原裝,假一罰十,公司可開17%增值稅發(fā)票!	詢價(jià)
深圳市一線半導(dǎo)體有限公司	M25PE40-VMP6G	NUM	24+		980		詢價(jià)
深圳市鵬和科技有限公司	M25PE40-VMW6	N/A	24+	SOP8	5000	只做原裝公司現(xiàn)貨	詢價(jià)
深圳市海天鴻電子科技有限公司	M25PE40-VMW6TG	Micron(ST)	1651+	SOP-8	7500	只做原裝進(jìn)口,假一罰十	詢價(jià)
千層芯半導(dǎo)體(深圳)有限公司	M25PE40-VMP6TG	Micron	24+	SOP-16	50000	專營Micron全線品牌假一賠萬原裝進(jìn)口貨可開增值稅發(fā)票	詢價(jià)

更多M25PE40供應(yīng)商更新時(shí)間2026-1-21 13:30:00

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