128K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6212816 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

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128K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6212816 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

文件：177.14 Kbytes 頁數(shù)：14 Pages

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128K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6212816 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

文件：177.14 Kbytes 頁數(shù)：14 Pages

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128K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6212816 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

文件：177.14 Kbytes 頁數(shù)：14 Pages

LYONTEK

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128K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6212816 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

文件：177.14 Kbytes 頁數(shù)：14 Pages

LYONTEK

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128K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6212816 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

文件：177.14 Kbytes 頁數(shù)：14 Pages

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128K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6212816 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

文件：177.14 Kbytes 頁數(shù)：14 Pages

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128K X 8 BIT LOW POWER CMOS SRAM

文件：346.55 Kbytes 頁數(shù)：16 Pages

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128K X 8 BIT LOW POWER CMOS SRAM

文件：908.49 Kbytes 頁數(shù)：20 Pages

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1024K X 8 BIT LOW POWER CMOS SRAM

文件：350.94 Kbytes 頁數(shù)：13 Pages

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