NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. FEATURES ? Diffused emitter ballasting resistors ? Self-aligned process entirely ion implanted and gold sandwich metallization ? optimum temp

文件：55.72 Kbytes 頁數(shù)：8 Pages

PHI

PHI

NPN microwave power transistor

恩XP

GaAs Varactor Diodes Abrupt Junction

Description Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a varie

文件：154.63 Kbytes 頁數(shù)：2 Pages

MICROSEMI

美高森美

ULTRA-SMALL PACKAGE SLIM POLARIZED RELAY

FEATURES ? Compact slim body saves space Thanks to the small surface area of 5.7 mm × 10.6 mm .224 inch × .417 inch and low height of 9.0 mm .354 inch, the pack aging density can be increased to allow for much smaller designs. ? Outstanding surge resistance. Surge withstand between open contac

文件：103.05 Kbytes 頁數(shù)：4 Pages

NAIS

松下電器

High Sensitivity, with 100mW nominal operating power, in a compact and space saving case

FEATURES 1. Compact slim body saves space Thanks to the small surface area of 5.7 mm × 10.6 mm .224 inch × .417 inch and low height of 9.0 mm .354 inch, the packaging density can be increased to allow for much smaller designs. 2. High sensitivity single side stable type (Nominal operatin

文件：117.05 Kbytes 頁數(shù)：5 Pages

PANASONIC

松下

ULTRA-SMALL PACKAGE SLIM POLARIZED RELAY

FEATURES ? Compact slim body saves space Thanks to the small surface area of 5.7 mm × 10.6 mm .224 inch × .417 inch and low height of 9.0 mm .354 inch, the pack aging density can be increased to allow for much smaller designs. ? Outstanding surge resistance. Surge withstand between open contac

文件：103.05 Kbytes 頁數(shù)：4 Pages

NAIS

松下電器