SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances res

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POLYFET

LDMOS SHORTFORM

Polyfet RF Devices

RF POWER LDMOS TRANSISTOR

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POLYFET

LOW NOISE LOW DRIFT MONOLITHIC DUAL N CHANNEL JFET

FEATURES LOW DRIFT |V GS1-2 / T| = 10μV/°C TYP. LOW NOISE en = 6nV/Hz @ 10Hz TYP. LOW PINCHOFF Vp = 2.5V TYP.

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LINEAR

N-CHANNEL JFET

The LSU401 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The LSU401 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applic

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MICROSS

N-CHANNEL JFET

The U401/ LSU401 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The LSU401 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation

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MICROSS