P-Channel Enhancement Mode Field Effect Transistor

The LPM9017 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebo ·-30V/-4A,RDS(ON) ＜58mΩ(typ.)@VGS=-10V\n·-30V/-3.0A,RDS(ON)＜68mΩ(typ.)@VGS=-4.5V\n·Super high density cell design for extremely low RDS(ON)\n·SOT23 Package;

LPSemi

微源半導(dǎo)體

P-Channel Enhancement Mode Field Effect Transistor

文件：802.12 Kbytes 頁(yè)數(shù)：7 Pages

POWER

微源半導(dǎo)體

SOT23, Dual, Precision, 1.8V, Nanopower Comparators With/Without Reference

文件：430.71 Kbytes 頁(yè)數(shù)：17 Pages

MAXIM

美信

SOT23, Dual, Precision, 1.8V, Nanopower Comparators With/Without Reference

General Description The single MAX9015/MAX9016 and dual MAX9017–MAX9020 nanoPower comparators in space-saving SOT23 packages feature Beyond-the-Rails? inputs and are guaranteed to operate down to 1.8V. The A-grade packages feature an on-board 1.236V ±1 reference, while the B-grade packages featur

文件：446.6 Kbytes 頁(yè)數(shù)：16 Pages

MAXIM

美信

SOT23, Dual, Precision, 1.8V, Nanopower Comparators With/Without Reference

文件：430.23 Kbytes 頁(yè)數(shù)：17 Pages

MAXIM

美信