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首頁 >LP7>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
LP750P100	文件：49.27 Kbytes Page：3 Pages	PACKAGED 0.5 WATT POWER PHEMT DESCRIPTION AND APPLICATIONS The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm Schottky barrier gate. The recessed “mushroom” gate structure minim 文件：49.27 Kbytes 頁數(shù)：3 Pages	FILTRONIC	FILTRONIC
LP750SOT89	文件：43.89 Kbytes Page：3 Pages	LOW NOISE, HIGH LINEARITY PACKAGED PHEMT DESCRIPTION AND APPLICATIONS The LP750SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 750 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed “m 文件：43.89 Kbytes 頁數(shù)：3 Pages	FILTRONIC	FILTRONIC
LP750SOT89-1	文件：43.89 Kbytes Page：3 Pages	LOW NOISE, HIGH LINEARITY PACKAGED PHEMT DESCRIPTION AND APPLICATIONS The LP750SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 750 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed “m 文件：43.89 Kbytes 頁數(shù)：3 Pages	FILTRONIC	FILTRONIC
LP750SOT89-2	文件：43.89 Kbytes Page：3 Pages	LOW NOISE, HIGH LINEARITY PACKAGED PHEMT DESCRIPTION AND APPLICATIONS The LP750SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 750 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed “m 文件：43.89 Kbytes 頁數(shù)：3 Pages	FILTRONIC	FILTRONIC
LP7512	文件：36.63 Kbytes Page：2 Pages	ULTRA LOW NOISE PHEMT DESCRIPTION AND APPLICATIONS The LP7512 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” gate structure minimi 文件：36.63 Kbytes 頁數(shù)：2 Pages	FILTRONIC	FILTRONIC
LP7512P70	文件：59.87 Kbytes Page：3 Pages	PACKAGED ULTRA LOW NOISE PHEMT DESCRIPTION AND APPLICATIONS The LP7512P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au g 文件：59.87 Kbytes 頁數(shù)：3 Pages	FILTRONIC	FILTRONIC
LP7612	文件：39.35 Kbytes Page：2 Pages	HIGH DYNAMIC RANGE PHEMT DESCRIPTION AND APPLICATIONS The LP7612 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” gate structure minimiz 文件：39.35 Kbytes 頁數(shù)：2 Pages	FILTRONIC	FILTRONIC
LP7612P70	文件：61.51 Kbytes Page：3 Pages	PACKAGED HIGH DYNAMIC RANGE PHEMT DESCRIPTION AND APPLICATIONS The LP7612P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au g 文件：61.51 Kbytes 頁數(shù)：3 Pages	FILTRONIC	FILTRONIC
LP7C31BH	文件：229.47 Kbytes Page：16 Pages	CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER MEMORY ORGANIZATION PROGRAM MEMORY: Up to 4 Kbytes of the program memory can reside on-chip (except 80C31BH). In addition the device can address up to 64K of program memory external to the chip. DATA MEMORY: This microcontroller has a 128 x 8 on-chip RAM. In addition it can address up to 64 Kb 文件：229.47 Kbytes 頁數(shù)：16 Pages	INTEL 英特爾	INTEL
LP7C51BH	文件：229.47 Kbytes Page：16 Pages	CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER MEMORY ORGANIZATION PROGRAM MEMORY: Up to 4 Kbytes of the program memory can reside on-chip (except 80C31BH). In addition the device can address up to 64K of program memory external to the chip. DATA MEMORY: This microcontroller has a 128 x 8 on-chip RAM. In addition it can address up to 64 Kb 文件：229.47 Kbytes 頁數(shù)：16 Pages	INTEL 英特爾	INTEL

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詳細(xì)參數(shù)

型號(hào)：
LP7
制造商：
INTEL
制造商全稱：
Intel Corporation
功能描述：
CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市得捷芯城科技有限公司	LP800	PULSE(普思)	25+		1476	原裝現(xiàn)貨,免費(fèi)供樣,技術(shù)支持,原廠對(duì)接	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	LP800	PULSE	2450+	SMD	6540	只做原廠原裝現(xiàn)貨或訂貨假一賠十!	詢價(jià)
艾睿（深圳）半導(dǎo)體有限公司	LP8000	德魯克DRUCK	2447	N	100500	一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長期排單到貨	詢價(jià)
深圳市科雨電子有限公司	LP800-2500-9-NF	LAIRD	25+	射頻元件	155	就找我吧!--邀您體驗(yàn)愉快問購元件!	詢價(jià)
訊運(yùn)(深圳/上海)電子有限公司	LP8008AB5F	LOWPOWER(微源半導(dǎo)體)	2021+	SOT-23-5	499		詢價(jià)
深圳市星宇佳科技有限公司	LP8008AB5F	LOWPOWER(微源半導(dǎo)體)	20+	SOT-23-5	3000		詢價(jià)
深圳市中聯(lián)芯電子有限公司	LP8008AB5F	微源	23+	SOT23-6	12000	只做原裝可追溯原廠優(yōu)勢(shì)可訂貨	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	LP8008B5F	微源	23+	SOT23-5	13000	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)
深圳市高捷芯城科技有限公司	LP800NMOW	YAGEO	25+	N/A	59948	樣件支持,可原廠排單訂貨!	詢價(jià)
深圳市一線半導(dǎo)體有限公司	LP800RLRA	MOTOROLA	24+	TO92	759		詢價(jià)

更多LP7供應(yīng)商更新時(shí)間2026-1-19 11:15:00

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