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          首頁 >LN66>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          LN66

          GaAs Infrared Light Emitting Diode

          GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 8 mW (typ.) ● Emitted light spectrum suited for silicon photodetectors ● Good radiant power output linearity with respect to input current ● Wide directivity : θ = 25 deg. (typ

          文件:47.6 Kbytes 頁數(shù):3 Pages

          PANASONIC

          松下

          LN66A

          GaAs infrared light emitting diode For optical control systems

          GaAs infrared light emitting diode For optical control systems ■ Features ? High-power output, high-efficiency: Ie = 9 mW/sr (min.) ? Emitted light spectrum is suited for silicon photodetectors ? Good radiant power output linearity with respect to input current ? Wide directivity: θ = 20° (t

          文件:83.6 Kbytes 頁數(shù):4 Pages

          PANASONIC

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          LN66AL

          GaAs infrared light emitting diode For optical control systems

          GaAs infrared light emitting diode For optical control systems ■ Features ? High-power output, high-efficiency: Ie = 9 mW/sr (min.) ? Emitted light spectrum is suited for silicon photodetectors ? Good radiant power output linearity with respect to input current ? Wide directivity: θ = 20° (t

          文件:83.6 Kbytes 頁數(shù):4 Pages

          PANASONIC

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          LN66F

          GaAs Infrared Light Emitting Diode

          GaAs Infrared Light Emitting Diode For light source of remote control systems Features ● High-power output, high-efficiency : Ie = 13.0 mW/sr (min.) ● Emitted light spectrum suited for silicon photodetectors ● Narrow directivity : θ = 15 deg. (typ.) ● Transparent epoxy resin package

          文件:41.81 Kbytes 頁數(shù):3 Pages

          PANASONIC

          松下

          LN66L

          GaAs Infrared Light Emitting Diode

          GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency :PO = 8 mW (typ.) ● Emitted light spectrum suited for silicon photodetectors ● Good radiant power output linearity with respect to input current ● Wide directivity : θ = 25 deg. (typ.

          文件:42.27 Kbytes 頁數(shù):3 Pages

          PANASONIC

          松下

          LN660000R

          Package:T 1 3/4;包裝:散裝 類別:光電器件 LED 發(fā)射器 - 紅外,紫外,可見光 描述:EMITTER IR 950NM 100MA T 1 3/4

          PANASONIC

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          LN66F

          包裝:散裝 類別:光電器件 LED 發(fā)射器 - 紅外,紫外,可見光 描述:EMITTER IR 950NM 50MA

          PANASONIC

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          詳細(xì)參數(shù)

          • 型號:

            LN66

          • 制造商:

            PANASONIC

          • 制造商全稱:

            Panasonic Semiconductor

          • 功能描述:

            GaAs Infrared Light Emitting Diode

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          25+
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          64581
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          更多LN66供應(yīng)商 更新時(shí)間2026-1-19 15:30:00
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