Low Current Consumption, High Sensitivity CMOS Hall IC

■ General Description The LN4913 is an integrated hall-effect sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 1.65V-5.5V. Precise magnetic switching points and high temperature st

文件：432.75 Kbytes 頁(yè)數(shù)：10 Pages

NATLINEAR

南麟

霍爾開(kāi)關(guān)

\nLN4913 是一款基于混合信號(hào)CMOS 技術(shù)的無(wú)極性霍爾開(kāi)關(guān)，這款I(lǐng)C 采用了先進(jìn)的斬波穩(wěn)定技術(shù)，因而能夠提供準(zhǔn)確而穩(wěn)定的磁開(kāi)關(guān)點(diǎn)。在電路設(shè)計(jì)上，LN4913提供了一個(gè)內(nèi)嵌的受控時(shí)鐘機(jī)制來(lái)為霍爾器件和模擬信號(hào)處理電路提供時(shí)鐘源，同時(shí)這個(gè)受控時(shí)鐘機(jī)制可以發(fā)出控制信號(hào)使得消耗電流較大的電路周期性的進(jìn)入“休眠”模式；同樣通過(guò)這個(gè)機(jī)制，芯片被周期性的“喚醒”并且根據(jù)預(yù)定好的磁場(chǎng)強(qiáng)度閾值檢測(cè)外界穿過(guò)霍爾器件磁場(chǎng)強(qiáng)度的大小。如果磁通密度高于“操作點(diǎn)”閾值或者低于“釋放點(diǎn)”閾值，則開(kāi)漏輸出晶體管被驅(qū)動(dòng)并鎖存成與之相對(duì)應(yīng)的狀態(tài)。而在“休眠”周期中，輸出晶體管被鎖定在其先前的狀態(tài)下。在電池供電應(yīng)用中，這種 ·1.65V—6.0V 電池應(yīng)用 \n·磁開(kāi)關(guān)點(diǎn)的高靈敏度高穩(wěn)定性 \n·抗機(jī)械應(yīng)力強(qiáng) \n·數(shù)字輸出信號(hào) \n·無(wú)極性的開(kāi)關(guān);

Natlinear

南麟

Low Current Consumption, High Sensitivity CMOS Hall IC

■ General Description The LN4913 is an integrated hall-effect sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 1.65V-5.5V. Precise magnetic switching points and high temperature st

文件：432.75 Kbytes 頁(yè)數(shù)：10 Pages

NATLINEAR

南麟

Low Current Consumption, High Sensitivity CMOS Hall IC

■ General Description The LN4913 is an integrated hall-effect sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 1.65V-5.5V. Precise magnetic switching points and high temperature st

文件：432.75 Kbytes 頁(yè)數(shù)：10 Pages

NATLINEAR

南麟

Low Current Consumption, High Sensitivity CMOS Hall IC

■ General Description The LN4913 is an integrated hall-effect sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 1.65V-5.5V. Precise magnetic switching points and high temperature st

文件：432.75 Kbytes 頁(yè)數(shù)：10 Pages

NATLINEAR

南麟

Low Current Consumption, High Sensitivity CMOS Hall IC

■ General Description The LN4913 is an integrated hall-effect sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 1.65V-5.5V. Precise magnetic switching points and high temperature st

文件：432.75 Kbytes 頁(yè)數(shù)：10 Pages

NATLINEAR

南麟

Low Current Consumption, High Sensitivity CMOS Hall IC

■ General Description The LN4913 is an integrated hall-effect sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 1.65V-5.5V. Precise magnetic switching points and high temperature st

文件：432.75 Kbytes 頁(yè)數(shù)：10 Pages

NATLINEAR

南麟

Low Current Consumption, High Sensitivity CMOS Hall IC

■ General Description The LN4913 is an integrated hall-effect sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 1.65V-5.5V. Precise magnetic switching points and high temperature st

文件：432.75 Kbytes 頁(yè)數(shù)：10 Pages

NATLINEAR

南麟

Low Current Consumption, High Sensitivity CMOS Hall IC

■ General Description The LN4913 is an integrated hall-effect sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 1.65V-5.5V. Precise magnetic switching points and high temperature st

文件：432.75 Kbytes 頁(yè)數(shù)：10 Pages

NATLINEAR

南麟