| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>LMG;Package:WSON(DEE);LMG1025-Q1 Automotive Low Side GaN and MOSFET Driver For High Frequency and Narrow Pulse Applications 1 Features ? AEC-Q100 grade 1 qualified ? 1.25ns typical minimum input pulse width ? 2.6ns typical rising propagation delay ? 2.9ns typical falling propagation delay ? 300ps typical pulse distortion ? Independent 7A pull-up and 5A pull-down current ? 650ps typical rise time (220pF load) ? 文件:2.21134 Mbytes 頁(yè)數(shù):30 Pages | TI 德州儀器 | TI | ||
絲?。?strong>LMG;Package:WSON(DEE);LMG1025-Q1 Automotive Low Side GaN and MOSFET Driver For High Frequency and Narrow Pulse Applications 1 Features ? AEC-Q100 grade 1 qualified ? 1.25ns typical minimum input pulse width ? 2.6ns typical rising propagation delay ? 2.9ns typical falling propagation delay ? 300ps typical pulse distortion ? Independent 7A pull-up and 5A pull-down current ? 650ps typical rise time (220pF load) ? 文件:2.21134 Mbytes 頁(yè)數(shù):30 Pages | TI 德州儀器 | TI | ||
絲印:LMG;Package:WSON(DEE);LMG1025-Q1 Automotive Low Side GaN and MOSFET Driver For High Frequency and Narrow Pulse Applications 1 Features ? AEC-Q100 grade 1 qualified ? 1.25ns typical minimum input pulse width ? 2.6ns typical rising propagation delay ? 2.9ns typical falling propagation delay ? 300ps typical pulse distortion ? Independent 7A pull-up and 5A pull-down current ? 650ps typical rise time (220pF load) ? 文件:2.21134 Mbytes 頁(yè)數(shù):30 Pages | TI 德州儀器 | TI | ||
絲?。?strong>LMG;Package:WSON(DEE);LMG1025-Q1 Automotive Low Side GaN and MOSFET Driver For High Frequency and Narrow Pulse Applications 1 Features ? AEC-Q100 grade 1 qualified ? 1.25ns typical minimum input pulse width ? 2.6ns typical rising propagation delay ? 2.9ns typical falling propagation delay ? 300ps typical pulse distortion ? Independent 7A pull-up and 5A pull-down current ? 650ps typical rise time (220pF load) ? 文件:2.21134 Mbytes 頁(yè)數(shù):30 Pages | TI 德州儀器 | TI | ||
絲印:LMG2610NNNNC;Package:VQFN;LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters 1 Features ? 650-V GaN power-FET half bridge ? 170-mΩ low-side and 248-mΩ high-side GaN FETs ? Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control ? Current-sense emulation with high-bandwidth and high accuracy ? Low-side / high-side gate-drive inter 文件:1.28785 Mbytes 頁(yè)數(shù):42 Pages | TI 德州儀器 | TI | ||
絲印:LMG2610NNNNC;Package:VQFN;LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters 1 Features ? 650-V GaN power-FET half bridge ? 170-mΩ low-side and 248-mΩ high-side GaN FETs ? Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control ? Current-sense emulation with high-bandwidth and high accuracy ? Low-side / high-side gate-drive inter 文件:1.28785 Mbytes 頁(yè)數(shù):42 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/lmg2640nnnnc/marking.html">LMG2640NNNNC;Package:VQFN;LMG2640 Integrated 650V GaN Half Bridge 1 Features ? 650V GaN power-FET half bridge ? 105mΩ low-side and high-side GaN FETs ? Integrated gate drivers with low propagation delays ? Current-sense emulation with high-bandwidth and high accuracy ? Low-side / high-side gate-drive interlock ? High-side gate-drive signal level shifter 文件:1.42282 Mbytes 頁(yè)數(shù):41 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/lmg2652/marking.html">LMG2652;Package:VQFN;LMG2652 650V 140mΩ GaN Half Bridge With Integrated Driver and Current Sense Emulation 1 Features ? 650V GaN power-FET half bridge ? 140mΩ low-side and high-side GaN FETs ? Integrated gate drivers with 文件:1.56704 Mbytes 頁(yè)數(shù):35 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/lmg2656nnnnc/marking.html">LMG2656NNNNC;Package:VQFN(RFB);LMG2656 650V 230mΩ GaN Half Bridge With Integrated Driver and Current Sense Emulation 1 Features ? 650V GaN power-FET half bridge ? 230mΩ low-side and high-side GaN FETs ? Integrated gate drivers with 文件:1.77236 Mbytes 頁(yè)數(shù):43 Pages | TI 德州儀器 | TI | ||
絲印:LMG3410R050;Package:VQFN(RWH);LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1? TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles ? Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l 文件:1.11817 Mbytes 頁(yè)數(shù):37 Pages | TI 德州儀器 | TI |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
TI(德州儀器) |
21+ |
WSON-6 |
8000 |
詢價(jià) | |||
TI(德州儀器) |
23+ |
WSON-6 |
13650 |
公司只做原裝正品,假一賠十 |
詢價(jià) | ||
TI/德州儀器 |
25+ |
WSON-6 |
32000 |
TI/德州儀器全新特價(jià)LMG1025QDEERQ1即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨 |
詢價(jià) | ||
TI(德州儀器) |
23+ |
原廠封裝 |
32078 |
10年以上分銷(xiāo)商,原裝進(jìn)口件,服務(wù)型企業(yè) |
詢價(jià) | ||
TI |
23+ |
WSON-6 |
1970 |
進(jìn)口原裝公司現(xiàn)貨熱賣(mài)假一罰十 |
詢價(jià) | ||
TI/德州儀器 |
22+ |
WSON-6 |
3000 |
公司現(xiàn)貨,有掛就有貨。 |
詢價(jià) | ||
TI |
23+ |
WSON-6 |
6000 |
原裝現(xiàn)貨/力挺實(shí)單 |
詢價(jià) | ||
TI |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
24+ |
20000 |
十年沉淀唯有原裝 |
詢價(jià) | ||||
TI(德州儀器) |
2511 |
N/A |
6000 |
電子元器件采購(gòu)降本 30%!公司原廠直采,砍掉中間差價(jià) |
詢價(jià) |
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