RF POWER TRANSISTORS Ldmos Enhanced Technology

DESCRIPTION The LET9130 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9130 is designed for high gain and broadband performance operating in common source mod

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STMICROELECTRONICS

意法半導體

RF POWER TRANSISTORS Ldmos Enhanced Technology

ST

意法半導體

6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs

Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m?. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness

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INTERSIL

CDS, OSH & ON/OFF

FEATURES 功能敘述 ? Separate LED and BUZZER driver. ? MODE：ONE-SHOT LEVEL-HOLD 1 LEVEL-HOLD 2 ON/OFF (Suffix-X)

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MOSDESIGN

一華半導體

Nylon Locknuts

文件：120.33 Kbytes 頁數(shù)：1 Pages

HEYCO