Improved light management system

文件：125.56 Kbytes 頁數(shù)：3 Pages

OSRAM

艾邁斯歐司朗

Microwave Pulse Power Silicon NPN Transistor 350W (peak), 1025-1150MHz

Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. ? Guaranteed performance @ 1090 MHz Output power = 350 W Peak Gain = 8.5 dB min, 9.0 dB (typ.) ? 100 tested for load mismatch at all phase angles with 10:1 VSWR ? Hermeticall

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MA-COM

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF10350 is Designed for TCAS/TACAN Applications up to 1090 MHz. FEATURES: ? Internal Input Matching Network ? PG = 8.5 dB at 350 W/1090 MHz ? Omnigold? Metalization System

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ASI

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. ? Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) ? 100 Tested for Load Mismatch

文件：147.24 Kbytes 頁數(shù)：4 Pages

MACOM