2 MEG (262144 words x 8 bits) Mask ROM Internal Clocked Silicon Gate

Overview The LC372100PP, LC372100PM and LC372100PT are 262,144-word ×8-bit organization (2,097,152-bit) mask programmable read only memories. The LC372100PP-10, LC372100PM-10 and LC372100PT-10 feature an access time of 100 ns, an OE access time of 40 ns, and a standby current of 30 μA, and are o

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2 MEG (262144 words x 8 bits) Mask ROM Internal Clocked Silicon Gate

Overview The LC372100PP, LC372100PM and LC372100PT are 262,144-word ×8-bit organization (2,097,152-bit) mask programmable read only memories. The LC372100PP-10, LC372100PM-10 and LC372100PT-10 feature an access time of 100 ns, an OE access time of 40 ns, and a standby current of 30 μA, and are o

文件：79.32 Kbytes 頁(yè)數(shù)：5 Pages

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2 MEG (262144 words x 8 bits) Mask ROM Internal Clocked Silicon Gate

Overview The LC372100PP, LC372100PM and LC372100PT are 262,144-word ×8-bit organization (2,097,152-bit) mask programmable read only memories. The LC372100PP-10, LC372100PM-10 and LC372100PT-10 feature an access time of 100 ns, an OE access time of 40 ns, and a standby current of 30 μA, and are o

文件：79.32 Kbytes 頁(yè)數(shù)：5 Pages

SANYO

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2 MEG (262144 words x 8 bits) Mask ROM Internal Clocked Silicon Gate

Overview The LC372100PP, LC372100PM and LC372100PT are 262,144-word ×8-bit organization (2,097,152-bit) mask programmable read only memories. The LC372100PP-10, LC372100PM-10 and LC372100PT-10 feature an access time of 100 ns, an OE access time of 40 ns, and a standby current of 30 μA, and are o

文件：79.32 Kbytes 頁(yè)數(shù)：5 Pages

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4 MEG (524288 words x 8 bits) Mask ROM Internal Clocked Silicon Gate

Overview The LC374100SM and LC374100ST are 524,288-word × 8-bit organization (4,194,304-bit) mask programmable read only memories. They feature a wide operating voltage range (2.6 to 5.5 V), a 100-ns access time (tCA) at VCC = 4.5 to 5.5 V, and a 200-ns access time at VCC = 2.6 to 3.3 V. Feature

文件：64.91 Kbytes 頁(yè)數(shù)：4 Pages

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4 MEG (524288 words x 8 bits) Mask ROM Internal Clocked Silicon Gate

Overview The LC374100SM and LC374100ST are 524,288-word × 8-bit organization (4,194,304-bit) mask programmable read only memories. They feature a wide operating voltage range (2.6 to 5.5 V), a 100-ns access time (tCA) at VCC = 4.5 to 5.5 V, and a 200-ns access time at VCC = 2.6 to 3.3 V. Feature

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Internal Synchronization Silicon Gate 4M (524288-word x 8-bit) mask ROM Pin Compatible with Flash Memory

Overview The LC374500ST is a 524288-word × 8-bit (4M) mask programmable ROM that is pin compatible with flash memory. Since this product supports the wide operating voltage range of 2.6 to 5.5 V and achieves access times of 100 ns (tCA) when VCC is between 4.5 and 5.5 V and 200 ns when VCC is be

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Internally Synchronized Silicon Gate 8M (1,048,576-word x 8-bit, 524,288-word x 16-bit) Mask ROM

Overview The LC378000RP is an 8-Mbit mask ROM that can be switched between byte mode, which provides an 8-bit × 1,048,576-word structure, and word mode, which provides a 16-bit × 524,288-word structure. Since this device operates over the wide supply voltage range of 2.6 to 5.5 V and achieves acc

文件：53.33 Kbytes 頁(yè)數(shù)：4 Pages

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8 MEG (1048576 words x 8 bits) Mask ROM Internal Clocked Silicon Gate

Overview The LC378100QM and LC378100QT are 1,048,576-word × 8-bit organization (8,388,608-bit) mask programmable read only memories. They feature a wide operating voltage range (2.6 to 5.5 V), a 100-ns access time (tCA) at VCC = 4.5 to 5.5 V, and a 200-ns access time at VCC = 2.6 to 3.3 V. Thus t

文件：64.72 Kbytes 頁(yè)數(shù)：4 Pages

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8 MEG (1048576 words x 8 bits) Mask ROM Internal Clocked Silicon Gate

Overview The LC378100QM and LC378100QT are 1,048,576-word × 8-bit organization (8,388,608-bit) mask programmable read only memories. They feature a wide operating voltage range (2.6 to 5.5 V), a 100-ns access time (tCA) at VCC = 4.5 to 5.5 V, and a 200-ns access time at VCC = 2.6 to 3.3 V. Thus t

文件：64.72 Kbytes 頁(yè)數(shù)：4 Pages

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