Plastic-Encapsulate Transistors

FEATURES Power dissipation PCM : 1 W ?Tamb=25?? Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJ?Tstg: -55? to +150?

文件：202.29 Kbytes 頁數(shù)：3 Pages

LRC

樂山無線電

SEMICONDUCTOR

文件：453.78 Kbytes 頁數(shù)：3 Pages

RECTRON

麗正國際

Plastic-Encapsulate Transistors

文件：1.07706 Mbytes 頁數(shù)：3 Pages

LEIDITECH

雷卯電子

Transistors

Rectron

麗正國際

Plastic-Encapsulate Transistors

FEATURES Power dissipation PCM : 1 W ?Tamb=25?? Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJ?Tstg: -55? to +150?

文件：202.29 Kbytes 頁數(shù)：3 Pages

LRC

樂山無線電

General Purpose Transistors NPN Silicon

FEATURE ● High current capacity in compact package. IC =1.5A. ● Epitaxial planar type. ● PNP complement: L8550H ● Pb-Free Package is available.

文件：52.29 Kbytes 頁數(shù)：3 Pages

LRC

樂山無線電

General Purpose Transistors NPN Silicon

FEATURE ● High current capacity in compact package. IC =1.5A. ● Epitaxial planar type. ● PNP complement: L8550H ● Pb-Free Package is available.

文件：52.29 Kbytes 頁數(shù)：3 Pages

LRC

樂山無線電

General Purpose Transistors NPN Silicon

FEATURE ● High current capacity in compact package. IC =1.5A. ● Epitaxial planar type. ● PNP complement: L8550H ● Pb-Free Package is available.

文件：52.29 Kbytes 頁數(shù)：3 Pages

LRC

樂山無線電

General Purpose Transistors NPN Silicon

FEATURE ● High current capacity in compact package. IC =1.5A. ● Epitaxial planar type. ● PNP complement: L8550H ● Pb-Free Package is available.

文件：52.29 Kbytes 頁數(shù)：3 Pages

LRC

樂山無線電

General Purpose Transistors NPN Silicon

FEATURE ● High current capacity in compact package. IC = 0.8A. ● Epitaxial planar type. ● PNP complement: L8550 ● Pb-Free Package is available.

文件：46.21 Kbytes 頁數(shù)：3 Pages

LRC

樂山無線電