絲?。?strong>KZT；Package：DO-214AA；600W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 600W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature solde

文件：3.25781 Mbytes 頁數(shù)：7 Pages

UNSEMI

優(yōu)恩半導體

絲?。?a target="_blank" title="Marking" href="/zt4401/marking.html">ZT4401；Package：SOT-223；NPN Transistors

■ Features ● Low Voltage and Low Current ● Linear Amplifier and Switch Applications ● Complementary to PZT4403

文件：943.02 Kbytes 頁數(shù)：2 Pages

KEXIN

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PNP Transistors

■ Features ● Collector Current Capability IC=-3A ● Collector Emitter Voltage VCEO=-40V ● Low Saturation voltage

文件：1.19503 Mbytes 頁數(shù)：3 Pages

KEXIN

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Surface Mount NPN Silicon Power Darlington Transistor

■ Features ● Silicon Power Darlington Transistors ● Low speed switching and amplifier applications ● Complementary to CZT127

文件：38.42 Kbytes 頁數(shù)：1 Pages

KEXIN

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Surface Mount PNP Silicon Power Darlington Transistor

Features ● High current (max. 5A). ● Low voltage (max. 100V).

文件：38.68 Kbytes 頁數(shù)：1 Pages

KEXIN

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NPN Switching Transistor

■ Features ● Epitaxial planar die construction ● Complementary to PZT2907A

文件：138.13 Kbytes 頁數(shù)：4 Pages

KEXIN

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NPN Transistors

■ Features ● Epitaxial planar die construction ● Complementary to PZT2907A

文件：718.27 Kbytes 頁數(shù)：2 Pages

KEXIN

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PNP Transistors

■ Features ● Epitaxial planar die construction ● Complementary to PZT2222A

文件：454.03 Kbytes 頁數(shù)：2 Pages

KEXIN

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2.0W Surface Mount Complementary PNP Silicon Power Transistor

Features ● High current (max. 6A). ● Low voltage (max. 60V).

文件：39.04 Kbytes 頁數(shù)：1 Pages

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2.0W Surface Mount Complementary NPN Silicon Power Transistor

Features ● High current (max. 6A). ● Low voltage (max. 60V).

文件：39 Kbytes 頁數(shù)：1 Pages

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