EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ? High Current. ? Low VCE(sat) . : VCE(sat)≤ 250mV at IC=200mA/IB=10mA. ? Complementary to KTA702E.

文件：74.1 Kbytes 頁數(shù)：3 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR NPN TRANSISTOR

文件：740.16 Kbytes 頁數(shù)：3 Pages

KEC

KEC(Korea Electronics)

Complex General Purpose Transistor, TES6, 12V, 0.5A

? High Current \n? Low VCE(sat) : VCE(sat)=250mV at Ic=200mA/IB=10mA\n? Complementary to KTA702E.;

KEC

Low-Power PHY IEEE? 1394A-2000 Two-Cable Transceiver/Arbiter Device

文件：340.23 Kbytes 頁數(shù)：26 Pages

AGERE

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet? process features low feedback and output capacitances re

文件：35.89 Kbytes 頁數(shù)：2 Pages

POLYFET

GaAlAs Semiconductor Laser

Features ? Low threshold current ? Stable single horizontal mode oscillation ? Long lifetime, high reliability ? High radiant power : 50mW Applications ? Optical data processing devices ? Optical disk memory ? Medical equipment

文件：40.59 Kbytes 頁數(shù)：2 Pages

PANASONIC

松下