SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(FOR MUTING AND SWITCHING)

FOR MUTING AND SWITCHING APPLICATION. FEATURES ? High Emitter-Base Voltage : VEBO=25V(Min.) ? High Reverse hFE : Reverse hFE=150(Typ.) (VCE=-2V, IC=-2mA) ? Low on Resistance : RON=1?(Typ.), (IB=5mA)

文件：321.6 Kbytes 頁數(shù)：3 Pages

KEC

KEC(Korea Electronics)

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features High VEBO,high reverse hFE(typ.150,VCE=-2V,IC=-2mA),low on resistance(Ron=1?,IB=5mA). Applications For muting and switching applications.

文件：614.18 Kbytes 頁數(shù)：6 Pages

FOSHAN

藍(lán)箭電子

EPITAXIAL PLANAR NPN TRANSISTOR

文件：52.07 Kbytes 頁數(shù)：3 Pages

KEC

KEC(Korea Electronics)

Audio Muting Transistor, SOT-23, 20V, 0.3A

? High Emitter-Base Voltage : VEBO=25V(min.) \n? High Reverse hFE : Reverse hFE=150(typ.) (VCE=-2V, Ic=-2mA)\n? Low on Resistance : Ron=1ohm(typ.), (IB=5mA);

KEC

EPITAXIAL PLANAR NPN TRANSISTOR

文件：52.07 Kbytes 頁數(shù)：3 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR NPN TRANSISTOR

文件：712.74 Kbytes 頁數(shù)：3 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR NPN TRANSISTOR

文件：52.07 Kbytes 頁數(shù)：3 Pages

KEC

KEC(Korea Electronics)

Audio Muting Transistor, SOT-23, 20V, 0.3A

? High emitter-base voltage\n? High reverse hFE \n? Low on resistance \n? With Built-in Bias Resistors\n? Simplify Circuit Design\n? Reduce a Quantity of Parts and Manufacturing Process.;

KEC