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          首頁 >KM41>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          KM416V1004C

          1M x 16Bit CMOS Dynamic RAM with Extended Data Out

          DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o

          文件:804.64 Kbytes 頁數(shù):35 Pages

          SAMSUNG

          三星

          KM416V1004C-45

          1M x 16Bit CMOS Dynamic RAM with Extended Data Out

          DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o

          文件:804.64 Kbytes 頁數(shù):35 Pages

          SAMSUNG

          三星

          KM416V1004C-5

          1M x 16Bit CMOS Dynamic RAM with Extended Data Out

          DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o

          文件:804.64 Kbytes 頁數(shù):35 Pages

          SAMSUNG

          三星

          KM416V1004C-6

          1M x 16Bit CMOS Dynamic RAM with Extended Data Out

          DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o

          文件:804.64 Kbytes 頁數(shù):35 Pages

          SAMSUNG

          三星

          KM416V1004C-L45

          1M x 16Bit CMOS Dynamic RAM with Extended Data Out

          DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o

          文件:804.64 Kbytes 頁數(shù):35 Pages

          SAMSUNG

          三星

          KM416V1004C-L5

          1M x 16Bit CMOS Dynamic RAM with Extended Data Out

          DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o

          文件:804.64 Kbytes 頁數(shù):35 Pages

          SAMSUNG

          三星

          KM416V1004C-L6

          1M x 16Bit CMOS Dynamic RAM with Extended Data Out

          DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o

          文件:804.64 Kbytes 頁數(shù):35 Pages

          SAMSUNG

          三星

          KM416V10CJ-L45

          1M x 16Bit CMOS Dynamic RAM with Extended Data Out

          DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o

          文件:804.64 Kbytes 頁數(shù):35 Pages

          SAMSUNG

          三星

          KM416V10CJ-L5

          1M x 16Bit CMOS Dynamic RAM with Extended Data Out

          DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o

          文件:804.64 Kbytes 頁數(shù):35 Pages

          SAMSUNG

          三星

          KM416V10CJ-L6

          1M x 16Bit CMOS Dynamic RAM with Extended Data Out

          DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o

          文件:804.64 Kbytes 頁數(shù):35 Pages

          SAMSUNG

          三星

          詳細參數(shù)

          • 型號:

            KM41

          • 制造商:

            knitter-switch

          • 制造商:

            TE Connectivity

          • 功能描述:

            KNOB WHITE

          供應(yīng)商型號品牌批號封裝庫存備注價格
          SEC
          2015+
          SMD
          19998
          專業(yè)代理原裝現(xiàn)貨,特價熱賣!
          詢價
          SAMSUNG
          25+
          SOJ
          18000
          原廠直接發(fā)貨進口原裝
          詢價
          SECKOREA
          25+
          QFPC
          1200
          原裝現(xiàn)貨熱賣中,提供一站式真芯服務(wù)
          詢價
          SAM
          QFP
          258
          正品原裝--自家現(xiàn)貨-實單可談
          詢價
          SAM
          24+/25+
          634
          原裝正品現(xiàn)貨庫存價優(yōu)
          詢價
          SAM
          16+
          NA
          8800
          原裝現(xiàn)貨,貨真價優(yōu)
          詢價
          SAMSUNG
          24+
          BGA
          6980
          原裝現(xiàn)貨,可開13%稅票
          詢價
          SAMSUNG
          24+
          SOJ42
          100
          原裝現(xiàn)貨假一罰十
          詢價
          Fairchild
          17+
          SOT23-6
          6200
          100%原裝正品現(xiàn)貨
          詢價
          SAMSUNG
          23+
          TSOP
          5000
          原裝正品,假一罰十
          詢價
          更多KM41供應(yīng)商 更新時間2026-1-21 16:40:00
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