N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES ? VDSS(Min.)= 600V, ID= 4.5A ? Drain-Source ON Re

文件：500.25 Kbytes 頁數(shù)：7 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES ? VDSS(Min.)= 600V, ID= 4.5A ? Drain-Source ON Re

文件：500.25 Kbytes 頁數(shù)：7 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

KEC

N-Channel 650 V (D-S) MOSFET

FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC

文件：1.08669 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES ? VDSS(Min.)= 600V, ID= 4.5A ? Drain-Source ON Re

文件：500.25 Kbytes 頁數(shù)：7 Pages

KEC

KEC(Korea Electronics)