N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES ? VDSS=600V, ID

文件：83.68 Kbytes 頁數(shù)：7 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

文件：584.89 Kbytes 頁數(shù)：7 Pages

KEC

KEC(Korea Electronics)

Planar MOSFETs, TO-220IS(1), 600V, 8A

? Fast switching time\n? Low on resistance and gate charge\n? Suitable for using switching mode power supplies.;

KEC

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES ? VDSS=600V, ID

文件：83.68 Kbytes 頁數(shù)：7 Pages

KEC

KEC(Korea Electronics)

N-Channel 650V (D-S) Power MOSFET

FEATURES ? Low figure-of-merit (FOM) Ron x Qg ? Low input capacitance (Ciss) ? Reduced switching and conduction losses ? Ultra low gate charge (Qg) ? Avalanche energy rated (UIS) APPLICATIONS ? Server and telecom power supplies ? Switch mode power supplies (SMPS) ? Power factor correction

文件：1.10751 Mbytes 頁數(shù)：10 Pages

VBSEMI

微碧半導(dǎo)體

商品目錄 MOS(場效應(yīng)管) 連續(xù)漏極電流（Id）（25°C 時） 7.5A(Tc) 漏源電壓（Vdss） 600V 柵源極閾值電壓 4V @ 250uA 漏源導(dǎo)通電阻 1.2 Ω @ 3.75A,10V 類型 N 溝道 最大功率耗散（Ta） 48W(Tc)

文件：192.03 Kbytes 頁數(shù)：6 Pages

KIA

可易亞半導(dǎo)體