N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES ? VDSS=600V,

文件：96.77 Kbytes 頁(yè)數(shù)：7 Pages

KEC

KEC(Korea Electronics)

Planar MOSFETs, TO-220IS(1), 600V, 7A

? Fast switching time\n? Low on resistance and gate charge\n? Suitable for using switching mode power supplies.;

KEC

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES ? VDSS=600V,

文件：96.77 Kbytes 頁(yè)數(shù)：7 Pages

KEC

KEC(Korea Electronics)

N-Channel 600 V (D-S)Power MOSFET

FEATURES ? Low gate charge Qg results in simple drive requirement ? Improved gate, avalanche and dynamic dV/dt ruggedness ? Fully characterized capacitance and avalanche voltage and current APPLICATIONS ? Switch mode power supply (SMPS) ? Uninterruptible power supply ? High speed power swit

文件：1.05213 Mbytes 頁(yè)數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

600V N-Channel MOSFET

文件：1.67461 Mbytes 頁(yè)數(shù)：6 Pages

KERSEMI