SILICON EPITAXIAL PLANAR DIODE

文件：39.59 Kbytes 頁數(shù)：2 Pages

KEC

KEC(Korea Electronics)

SILICON EPITAXIAL PLANAR DIODE

文件：350.72 Kbytes 頁數(shù)：2 Pages

KEC

KEC(Korea Electronics)

VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE

VCO FOR UHF/VHF BAND.\n\nFEATURES\nHigh Capacitance Ratio : C1V/C4V=2.0(Min.)\nLow Series Resistance : rs=0.45 (Max.) High Capacitance Ratio : C1V/C4V=2.0(Min.)\nLow Series Resistance : rs=0.45 (Max.);

KEC

P-Channel 1.8V Specified PowerTrench MOSFET

文件：62.34 Kbytes 頁數(shù)：2 Pages

KEXIN

科信電子

Converter - Brake - Inverter Module (CBI1)

Features ● NPT IGBT technology Square RBSOA, no latchup ● Free wheeling diodes with Hiperfast and soft recovery behaviour ● Isolation voltage 2500 V~ ● Built in temperature sense ● High level of integration: one module for complete drive system ● Direct Copper Bonded Al2O3 ceramic base plate

文件：207.63 Kbytes 頁數(shù)：8 Pages

IXYS

艾賽斯

Enclosed Isolators 3, 4, 6 and 8 Poles

文件：189.33 Kbytes 頁數(shù)：4 Pages

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