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          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          BSS64HZG

          絲?。?strong>K9F;Package:SOT-23;High-voltage Amplifier Transistor (100V, 100mA)

          Features 1) High breakdown voltage. (BVCEO=100V) 2) Complements the BSS63 HZG. Application HIGH VOLTAGE AMPLIFIER

          文件:1.43838 Mbytes 頁數(shù):10 Pages

          ROHM

          羅姆

          K9F1208B0B

          64M x 8 Bit NAND Flash Memory

          GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.7V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200μs o

          文件:1.02953 Mbytes 頁數(shù):45 Pages

          SAMSUNG

          三星

          K9F1208B0C

          64M x 8 Bits NAND Flash Memory

          GENERAL DESCRIPTION Offered in 64Mx8bits, the K9F1208X0C is 512Mbit with spare 16Mbit capacity. The device is offered in 1.8V, 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200μ

          文件:824.15 Kbytes 頁數(shù):38 Pages

          SAMSUNG

          三星

          K9F1208B0C-P

          FLASH MEMORY

          GENERAL DESCRIPTION Offered in 64Mx8bits, the K9F1208X0C is 512Mbit with spare 16Mbit capacity. The device is offered in 1.8V, 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200μ

          文件:685.65 Kbytes 頁數(shù):38 Pages

          SAMSUNG

          三星

          K9F1208D0A

          64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

          GENERAL DESCRIPTION Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical

          文件:748.18 Kbytes 頁數(shù):46 Pages

          SAMSUNG

          三星

          K9F1208D0A-P

          64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

          GENERAL DESCRIPTION Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical

          文件:748.18 Kbytes 頁數(shù):46 Pages

          SAMSUNG

          三星

          K9F1208D0A-Y

          64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

          GENERAL DESCRIPTION Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical

          文件:748.18 Kbytes 頁數(shù):46 Pages

          SAMSUNG

          三星

          K9F1208D0B

          64M x 8 Bit NAND Flash Memory

          GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on

          文件:767.01 Kbytes 頁數(shù):45 Pages

          SAMSUNG

          三星

          K9F1208D0B-D

          64M x 8 Bit NAND Flash Memory

          GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on

          文件:767.01 Kbytes 頁數(shù):45 Pages

          SAMSUNG

          三星

          K9F1208D0B-Y

          64M x 8 Bit NAND Flash Memory

          GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on

          文件:767.01 Kbytes 頁數(shù):45 Pages

          SAMSUNG

          三星

          供應(yīng)商型號品牌批號封裝庫存備注價格
          ROHM
          21+
          SOT-23
          21000
          一級代理進口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營
          詢價
          ON/安森美
          23+
          SOT-23
          123050
          原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
          詢價
          ON
          22+
          TO-220-3
          50000
          原裝正品假一罰十,代理渠道價格優(yōu)
          詢價
          ON/ONSemiconductor/安森
          24+
          SOT-23
          8200
          新進庫存/原裝
          詢價
          ON
          16+
          原廠封裝
          10000
          全新原裝正品,代理優(yōu)勢渠道供應(yīng),歡迎來電咨詢
          詢價
          ON/安森美
          23+
          SOT-23
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          ON Semiconductor
          2022+
          SOT-23-3(TO-236)
          38550
          全新原裝 支持表配單 中國著名電子元器件獨立分銷
          詢價
          onsemi
          25+
          TO-236-3 SC-59 SOT-23-3
          9350
          獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
          詢價
          ON/安森美
          25+
          SOT-23
          2010
          原裝正品,假一罰十!
          詢價
          Infineon
          24+
          SOT-363
          11850
          公司現(xiàn)貨庫存,支持實單
          詢價
          更多K9F供應(yīng)商 更新時間2026-1-18 13:02:00
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