絲?。?strong>K5N；Package：SOT-323；PNP Silicon Epitaxial Planar Transistor

FEATURES ● Power dissipation. ● Epitaxial planar die construction. ● Complementary to MMST3904. ● Also available in lead free version. APPLICATIONS ● General purpose application and switching application.

文件：328.39 Kbytes 頁數(shù)：4 Pages

BILIN

銀河微電

絲?。?strong>K5N；Package：SC70-5；Rail-to-rail high-speed comparator

Features ? Propagation delay: 8 ns ? Low current consumption: 470 μA typ. at 5 V ? Rail-to-rail inputs ? Push-pull outputs ? Supply operation from 2.2 to 5 V ? Wide temperature range: -40 °C to 125 °C ? ESD tolerance: 2 kV HBM/200 V MM ? Available in SOT23-5, SC70-5 and DFN8 2x2 wettable f

文件：1.25985 Mbytes 頁數(shù)：20 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?strong>K5N；Package：DFN82x2；Rail-to-rail high-speed comparator

Features ? Propagation delay: 8 ns ? Low current consumption: 470 μA typ. at 5 V ? Rail-to-rail inputs ? Push-pull outputs ? Supply operation from 2.2 to 5 V ? Wide temperature range: -40 °C to 125 °C ? ESD tolerance: 2 kV HBM/200 V MM ? Available in SOT23-5, SC70-5 and DFN8 2x2 wettable f

文件：1.25985 Mbytes 頁數(shù)：20 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?strong>K5N；Package：SOT-323；PNP Silicon Epitaxial Planar Transistor

文件：316.46 Kbytes 頁數(shù)：4 Pages

BILIN

銀河微電

絲印：K5NQ15T；Package：SOT96-1；N-channel TrenchMOS standard level FET

1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and benefits ? Lo

文件：723.96 Kbytes 頁數(shù)：12 Pages

NEXPERIA

安世

512Mb (32M x16) Muxed Burst, Multi Bank SLC NOR Flash

文件：2.51188 Mbytes 頁數(shù)：128 Pages

SAMSUNG

三星

FIXED ATTENUATORS

文件：276.71 Kbytes 頁數(shù)：1 Pages

MINI