絲印：K4N；Package：SOT-323；NPN Transistors

■ Features ● Small Surface Mount Package ● Ideal for Medium Power Amplification and Switching ● Complementary to MMST5401

文件：368.42 Kbytes 頁數(shù)：1 Pages

KEXIN

科信電子

絲印：K4N；Package：SOT-323；Plastic-Encapsulate Transistors

FEATURE Ideal for Medium Power Amplification and Switching Also Available in Lead Free Version Complementary to MMBT5401W

文件：321.53 Kbytes 頁數(shù)：3 Pages

GWSEMI

唯圣電子

絲?。?strong>K4N；Package：SOT-363；NPNNPN Plastic-Encapsulate Transistors

FEATURES ? Epoxy meets UL-94 V-0 flammability rating ? Complementary to MMDT5401 ? Epitaxial Planar Die Construction ? Ideal for Medium Power Amplification and Switching

文件：1.44705 Mbytes 頁數(shù)：5 Pages

JINGHENG

晶恒

絲?。?strong>K4N；Package：SOT-363；Epitaxial Planar Die Construction

Features Epitaxial Planar Die Construction Complementary PNP Type Available (MMDT5401) Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3)

文件：772.06 Kbytes 頁數(shù)：3 Pages

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

絲?。?strong>K4N；Package：SOT-363；SOT-363 Plastic-Encapsulate Transistors

Features Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) Ideal for Medium Power Amplification and Switching

文件：1.40655 Mbytes 頁數(shù)：4 Pages

DGNJDZ

南晶電子

絲?。?strong>K4N；Package：SOT-363；Plastic-Encapsulate Transistors

FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) Ideal for Medium Power Amplification and Switching

文件：396.73 Kbytes 頁數(shù)：3 Pages

GWSEMI

唯圣電子

絲?。?strong>K4N；Package：SOT-323；SOT-323 Plastic-Encapsulate Transistors

FEATURES Complementary to MMST5401 Small Surface Mount Package Ideal for Medium Power Amplification and Switching

文件：1.82698 Mbytes 頁數(shù)：4 Pages

DGNJDZ

南晶電子

絲印：K4N；Package：SOT-323；NPN Transistors

■ Features ● Small Surface Mount Package ● Ideal for Medium Power Amplification and Switching ● Complementary to MMST5401

文件：368.42 Kbytes 頁數(shù)：1 Pages

KEXIN

科信電子

絲?。?strong>K4N；Package：SOT-323；NPN General Purpose Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary PNP type available (MMST5401). ● Also available in lead free version. APPLICATIONS ● Ideal for medium power amplification and switching.

文件：157.73 Kbytes 頁數(shù)：3 Pages

BILIN

銀河微電

絲?。?strong>K4N；Package：S-TOGL；MOSFETs Silicon N-channel MOS

Applications ? Automotive ? Switching Voltage Regulators ? Motor Drivers ? DC-DC Converters Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 0.8 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to

文件：600.63 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝