TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Switching Regulator Applications ? Low drain-source ON resistance: RDS (ON) = 1.7 ? (typ.) ? High forward transfer admittance: ?Yfs? = 2.2 S (typ.) ? Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) ? Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

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TOSHIBA

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

Switching Regulator Applications ? Low drain-source ON-resistance: RDS (ON) = 1.6Ω(typ.) ? High forward transfer admittance: |Yfs| = 2.2 S (typ.) ? Low leakage current: IDSS = 10 μA (max) (VDS = 600V) ? Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

文件：261.5 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

文件：4.63909 Mbytes 頁數(shù)：28 Pages

SAMSUNG

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PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

文件：4.63909 Mbytes 頁數(shù)：28 Pages

SAMSUNG

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PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

文件：4.63909 Mbytes 頁數(shù)：28 Pages

SAMSUNG

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4Gb D-die DDR4 SDRAM

文件：1.49207 Mbytes 頁數(shù)：66 Pages

SAMSUNG

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PRODUCT SELECTION GUIDE

文件：3.33037 Mbytes 頁數(shù)：28 Pages

SAMSUNG

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PRODUCT SELECTION GUIDE

文件：3.33037 Mbytes 頁數(shù)：28 Pages

SAMSUNG

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4Gb E-die DDR4 SDRAM

文件：1.68979 Mbytes 頁數(shù)：73 Pages

SAMSUNG

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4Gb E-die DDR4 SDRAM

文件：1.68979 Mbytes 頁數(shù)：73 Pages

SAMSUNG

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