K40 Sub-Family

文件：2.19129 Mbytes 頁數(shù)：68 Pages

恩XP

Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz

文件：1.74897 Mbytes 頁數(shù)：63 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

K40 Sub-Family Data Sheet

文件：876.82 Kbytes 頁數(shù)：60 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz

文件：1.74897 Mbytes 頁數(shù)：63 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

K40 Sub-Family

文件：1.87901 Mbytes 頁數(shù)：72 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

K40 Sub-Family

文件：2.20659 Mbytes 頁數(shù)：69 Pages

恩XP

IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

文件：516.59 Kbytes 頁數(shù)：16 Pages

INFINEON

英飛凌

IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel Emitter Controlled Diode

文件：598.14 Kbytes 頁數(shù)：15 Pages

INFINEON

英飛凌

絲印：K4013；Silicon N Channel MOS Type Switching Regulator Applications

Switching Regulator Applications ? Low drain-source ON resistance: RDS (ON)= 1.35 ?(typ.) ? High forward transfer admittance: |Yfs| = 5.0 S (typ.) ? Low leakage current: IDSS= 100 μA (max) (VDS= 640 V) ? Enhancement-model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

文件：254.01 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k40mch7/marking.html">K40MCH7；Package：PG-TO247-3-STD-NN2.5；High speed 1200 V TRENCHSTOP? IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode

Features ? VCE = 1200 V ? IC = 40 A ? Maximum junction temperature Tvjmax = 175°C ? Best-in-class high speed IGBT co-packed with full rated current, low Qrr and soft-commutating high speed diode ? Low saturation voltage VCEsat = 1.7 V at Tvj = 25°C ? Optimized for high efficiency in high sp

文件：1.40569 Mbytes 頁數(shù)：17 Pages

INFINEON

英飛凌