| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SWITCHING N-CHANNEL POWER MOSFET The 2SK3639 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. 文件:148.99 Kbytes 頁數(shù):7 Pages | NEC 瑞薩 | NEC | ||
SWITCHING N-CHANNEL POWER MOSFET The 2SK3659 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. 文件:77.2 Kbytes 頁數(shù):8 Pages | NEC 瑞薩 | NEC | ||
Silicon N Channel MOS Type Switching Regulator Applications ? Low drain-source ON resistance: RDS (ON)= 0.74Ω(typ.) ? High forward transfer admittance: |Yfs| = S (typ.) ? Low leakage current: IDSS= 100 μA (VDS= 600 V) ? Enhancement-mode: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA) 文件:226.21 Kbytes 頁數(shù):6 Pages | TOSHIBA 東芝 | TOSHIBA | ||
N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 文件:115.28 Kbytes 頁數(shù):4 Pages | FUJI 富士通 | FUJI | ||
N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 文件:114.99 Kbytes 頁數(shù):4 Pages | FUJI 富士通 | FUJI | ||
N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 文件:119.76 Kbytes 頁數(shù):4 Pages | FUJI 富士通 | FUJI | ||
Fuji Power MOSFET SuperFAP-G series Target Specification Features 1. High speed switching 2. Low on-resistance 3. No secondary breadown 4. Low driving power 5. Avalanche-proof 文件:112.67 Kbytes 頁數(shù):1 Pages | FUJI 富士通 | FUJI | ||
N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 文件:110.06 Kbytes 頁數(shù):4 Pages | FUJI 富士通 | FUJI | ||
LOW VF SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c 文件:472.03 Kbytes 頁數(shù):3 Pages | SY 順燁電子 | SY | ||
Surface Mounted Schottky Barrier Rectifiers Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Built-in strain relief,ideal for automated placement Low reverse leakage High forward surge current capability AEC-Q 101 qualified 文件:126.66 Kbytes 頁數(shù):2 Pages | GWSEMI 唯圣電子 | GWSEMI |
產(chǎn)品屬性
- 產(chǎn)品編號:
K36
- 制造商:
Siemens
- 包裝:
盒
- 描述:
HEATER HEATER ELEMENT
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
TOSH |
24+ |
SOD123FL |
2000 |
全新原裝深圳倉庫現(xiàn)貨有單必成 |
詢價 | ||
DIODES/SE |
19+ |
SOT23 |
20000 |
詢價 | |||
DIODES/SE |
24+ |
SOT23 |
63200 |
一級代理/放心采購 |
詢價 | ||
TOSH |
23+ |
SOD123FL |
120000 |
詢價 | |||
GOODWORK |
50 |
詢價 | |||||
24+ |
N/A |
48000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
GOODWORK |
24+ |
con |
50 |
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價格 |
詢價 | ||
MIC/TOS |
24+ |
SOD-123FL |
60000 |
全新原裝現(xiàn)貨 |
詢價 | ||
DIODES/SEMTECH |
25+ |
SOT23 |
54648 |
百分百原裝現(xiàn)貨 實單必成 |
詢價 | ||
GOODWORK |
24+ |
n/a |
25836 |
新到現(xiàn)貨,只做原裝進口 |
詢價 |
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