TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4)

Switching Regulator Applications ? Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) ? High forward transfer admittance: |Yfs| = 2.6 S (typ.) ? Low leakage current: IDSS = 100 μ A (VDS = 720 V) ? Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

文件：94.43 Kbytes 頁數(shù)：3 Pages

TOSHIBA

東芝

64K (8192-word ? 8-bit) SRAM with OE, CE1, and CE2 Control Pins

Overview The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word ×8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features

文件：137.66 Kbytes 頁數(shù)：9 Pages

SANYO

三洋

64K (8192-word ? 8-bit) SRAM with OE, CE1, and CE2 Control Pins

Overview The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word ×8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features

文件：137.66 Kbytes 頁數(shù)：9 Pages

SANYO

三洋

64K (8192-word ? 8-bit) SRAM with OE, CE1, and CE2 Control Pins

Overview The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word ×8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features

文件：137.66 Kbytes 頁數(shù)：9 Pages

SANYO

三洋