SCHOTTKY RECTIFIERS

文件：1.22815 Mbytes 頁(yè)數(shù)：3 Pages

NIUHANG

紐航電子

絲?。?strong>K29；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

文件：704.49 Kbytes 頁(yè)數(shù)：9 Pages

ROHM

羅姆

絲印：K29；Package：SOT-323；NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)

文件：1.37108 Mbytes 頁(yè)數(shù)：8 Pages

ROHM

羅姆

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC?DC Converter and Motor Drive Applications ● Low drain?source ON resistance : RDS (ON) = 0.31 ? (typ.) ● High forward transfer admittance : |Yfs| = 15 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) ● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID

文件：302.67 Kbytes 頁(yè)數(shù)：5 Pages

TOSHIBA

東芝

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC?DC Converter and Motor Drive Applications ● Low drain–source ON resistance : RDS (ON) = 0.21 ? (typ.) ● High forward transfer admittance : |Yfs| = 17 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) ● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID

文件：297.92 Kbytes 頁(yè)數(shù)：5 Pages

TOSHIBA

東芝

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features ? Low on-resistance RDS(on)= 0.042? typ. ? 4V gate drive devices. ? High speed switching

文件：53.16 Kbytes 頁(yè)數(shù)：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features ? Low on-resistance : RDS=0.026 ?typ. ? High speed switching ? 4V gate drive device can be driven from 5V source

文件：121.72 Kbytes 頁(yè)數(shù)：8 Pages

RENESAS

瑞薩

External dimensions

Sanken / MOS FET ( 2SK1177 thru 2SK3460)

文件：48.74 Kbytes 頁(yè)數(shù)：2 Pages

SANKEN

三墾

HIGH RELIABILITY FOR LOW COST

FEATURES - HIGH RELIABILITY FOR LOW COST - WIDE FREQUENCY RANGE - EXCELLENT ATTENUATION BEHAVIOUR

文件：90.16 Kbytes 頁(yè)數(shù)：5 Pages

PETERMANN

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR APPLICATIONS)

Chopper Regulator Applications ● Low drain?source ON resistance : RDS (ON) = 0.4 ? (typ.) ● High forward transfer admittance : |Yfs| = 8.0 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 400 V) ● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：291.75 Kbytes 頁(yè)數(shù)：5 Pages

TOSHIBA

東芝