絲?。?strong>K250；Package：SOT23-5；Very high accuracy (5 μV) high bandwidth (10 MHz) zero drift 5 V op amp

Features ? Very high accuracy and stability: offset voltage – 5 μV max. at 25 °C – 8 μV over the full temperature range (-40 °C to 125 °C) ? Rail-to-rail input and output ? Low supply voltage: 2.5 - 5.5 V ? Low power consumption: 1.5 mA at 5 V ? Gain-bandwidth product: 10 MHz ? AEC-Q100 au

文件：826.8 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/k2503/marking.html">K2503；Package：SOT-428；Small switching (60V, 5A)

Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 4V drive. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching

文件：135.78 Kbytes 頁數(shù)：4 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/k2504/marking.html">K2504；Package：SOT-428；4V Drive Nch MOS FET

Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 4V drive. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching

文件：95.66 Kbytes 頁數(shù)：6 Pages

ROHM

羅姆

絲印：K2504；Package：SOT-428；Small switching (100V, 5A)

Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 4V drive. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching

文件：134.2 Kbytes 頁數(shù)：4 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/k2503/marking.html">K2503；Package：SOT-428；4V Drive Nch MOS FET

文件：97.54 Kbytes 頁數(shù)：6 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/k2504/marking.html">K2504；Package：SOT-428；4V Drive Nch MOS FET

文件：99.04 Kbytes 頁數(shù)：6 Pages

ROHM

羅姆

Silicon Bilateral Voltage Triggered Switch

[Ceramate] General Description The sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon application of a voltage exceeding the sidac breakover voltage point, the sidac switches on through a negative resistance region to a low on

文件：101.63 Kbytes 頁數(shù)：2 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

Thyristor Product Catalog

General Description The sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon application of a voltage exceeding the sidac breakover voltage point, the sidac switches on through a negative resistance region to a low on-state volt

文件：2.69754 Mbytes 頁數(shù)：224 Pages

TECCOR

High-voltage lamp ignitors

Description The SIDAC is a silicon bilateral voltage triggered switch. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance region to a low on-state voltage. Conduction continues until the current is interrupted or drops be

文件：181.4 Kbytes 頁數(shù)：7 Pages

LITTELFUSE

力特

Teccor? brand Thyristors Standard Bidirectional SIDACs

Description The SIDAC is a silicon bilateral voltage triggered switch. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance region to a low on-state voltage. Conduction continues until the current is interrupted or drops be

文件：1.50101 Mbytes 頁數(shù)：12 Pages

LITTELFUSE

力特