肖特基二極管

DOWOSEMI

東沃電子

絲印：K22A；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, epetition r ate (duty cycle): 0.01%

文件：1.26024 Mbytes 頁數(shù)：7 Pages

SY

順燁電子

絲?。?a target="_blank" title="Marking" href="/k22c/marking.html">K22C；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, epetition r ate (duty cycle): 0.01%

文件：1.26024 Mbytes 頁數(shù)：7 Pages

SY

順燁電子

絲?。?a target="_blank" title="Marking" href="/k220/marking.html">K220；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件：2.53183 Mbytes 頁數(shù)：4 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/k220/marking.html">K220；Package：SOD-123FL；SURFACE MOUNT SCHOTTKY BARRIERRECTIFIER

Features ? Low power loss, high efficiency ? High forward surge current capability + High Current Capability + For surface mounted applications + Meets MSL level 1, per J-STD-020, LF maximum peak of 260°C Applications. These Schottky barrier diodes are designed for high speed switching. ap

文件：942.77 Kbytes 頁數(shù)：3 Pages

TECHPUBLIC

臺(tái)舟電子

絲?。?a target="_blank" title="Marking" href="/k22l/marking.html">K22L；Package：SOD-123FL；LOW VF S URFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features Plastic package has Underwriters Laboratory Flammability classification 94V-0 Utilizing Fame Retardant Epoxy Molding Compound For surface mount applications Low leakage current.

文件：1.17552 Mbytes 頁數(shù)：3 Pages

SY

順燁電子

絲?。?a target="_blank" title="Marking" href="/k22a65x/marking.html">K22A65X；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.12 Ω (typ.) by using Super Junction Structure: DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.1 mA)

文件：444.99 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k22a65x5/marking.html">K22A65X5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.135 Ω (typ.) by using Super Junction Structure: DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.1 mA)

文件：445.51 Kbytes 頁數(shù)：9 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k220/marking.html">K220；Package：SOD123FL；Surface Mount Schottky Barrier Rectifier

文件：409.22 Kbytes 頁數(shù)：3 Pages

YFWDIODE

佑風(fēng)微

絲印：K220；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

文件：2.35179 Mbytes 頁數(shù)：3 Pages

LEIDITECH

雷卯電子