絲?。?strong>K21；Package：TSMT6；2.5V Drive Nch MOSFET

■ MOSFETs ● Small Signal MOSFET Series ● Middle Power MOSFET Series ● Power MOSFET Series ■ Selector Guide for Automotive MOSFETs (AEC-Q101) ■ Bipolar Transistors (Surface mount type) ■ Transistor Array ■ Complex Bipolar Transistors ■ Digital Transistors ■ Complex Digital Transis

文件：223.59 Kbytes 頁數(shù)：5 Pages

ROHM

羅姆

絲?。?strong>K21；Package：TSMT8；4V Drive Nch Nch MOSFET

■ MOSFETs ● Small Signal MOSFET Series ● Middle Power MOSFET Series ● Power MOSFET Series ■ Selector Guide for Automotive MOSFETs (AEC-Q101) ■ Bipolar Transistors (Surface mount type) ■ Transistor Array ■ Complex Bipolar Transistors ■ Digital Transistors ■ Complex Digital Transis

文件：230.49 Kbytes 頁數(shù)：6 Pages

ROHM

羅姆

絲印：K21；Package：TSMT6；Nch 45V 1A Power MOSFET

文件：1.08615 Mbytes 頁數(shù)：14 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/k210/marking.html">K210；Package：SOD-123FL；SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

文件：1.16064 Mbytes 頁數(shù)：3 Pages

SY

順燁電子

絲?。?a target="_blank" title="Marking" href="/k210/marking.html">K210；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件：2.53183 Mbytes 頁數(shù)：4 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/k212/marking.html">K212；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件：2.53183 Mbytes 頁數(shù)：4 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

絲印：K215；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件：2.53183 Mbytes 頁數(shù)：4 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/k210/marking.html">K210；Package：SOD-123FL；SURFACE MOUNT SCHOTTKY BARRIERRECTIFIER

Features ? Low power loss, high efficiency ? High forward surge current capability + High Current Capability + For surface mounted applications + Meets MSL level 1, per J-STD-020, LF maximum peak of 260°C Applications. These Schottky barrier diodes are designed for high speed switching. ap

文件：942.77 Kbytes 頁數(shù)：3 Pages

TECHPUBLIC

臺舟電子

絲?。?a target="_blank" title="Marking" href="/k215/marking.html">K215；Package：SOD-123FL；SURFACE MOUNT SCHOTTKY BARRIERRECTIFIER

Features ? Low power loss, high efficiency ? High forward surge current capability + High Current Capability + For surface mounted applications + Meets MSL level 1, per J-STD-020, LF maximum peak of 260°C Applications. These Schottky barrier diodes are designed for high speed switching. ap

文件：942.77 Kbytes 頁數(shù)：3 Pages

TECHPUBLIC

臺舟電子

絲?。?a target="_blank" title="Marking" href="/k218/marking.html">K218；Package：QFN163x3；Low-power quad operational amplifiers

Features Wide gain bandwidth: 1.3 MHz Input common-mode voltage range includes negative rail Large voltage gain: 100 dB Supply current per amplifier: 375 μA Low input bias current: 20 nA Low input offset current: 2 nA Wide power supply range: – Single supply: 3 V to 30 V – Dual supplies:

文件：792.57 Kbytes 頁數(shù)：20 Pages

STMICROELECTRONICS

意法半導(dǎo)體