Silver Plated CU

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E-SWITCH

Silver Plated CU

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E-SWITCH

Silver Plated CU

文件：67.81 Kbytes 頁數(shù)：1 Pages

E-SWITCH

Silver Plated CU

文件：67.26 Kbytes 頁數(shù)：1 Pages

E-SWITCH

Silver Plated CU

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E-SWITCH

Safety Lock-off hasps

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ETCList of Unclassifed Manufacturers

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Silver Plated CU

文件：69.87 Kbytes 頁數(shù)：1 Pages

E-SWITCH

絲?。?a target="_blank" title="Marking" href="/k200gcp2/marking.html">K200GCP2；Package：PG-TO247-3-PLUS-NN8.5；Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package co-packed with soft and fast recovery diode

Features ? VCE = 750 V ? IC = 200 A ? Low saturation voltage VCEsat = 1.4 V ? Low switching losses ? Short circuit ruggedness 3 μs ? IGBT co-packed with full current, soft and fast recovery diode ? Optimized for hard switching topologies up to 10 KHz ? Package backside suitable for reflow

文件：1.65082 Mbytes 頁數(shù)：17 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/k200a65z5/marking.html">K200A65Z5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 95 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.154 Ω (typ.) (3) High-speed switching properties with the lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 0.61

文件：493.67 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k200e65z5/marking.html">K200E65Z5；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 95 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.154 Ω (typ.) (3) High-speed switching properties with lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 0.61 mA)

文件：503.23 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝