TRIAC (Silicon Bidirectional Thyristor)

文件：284.47 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導體

IGBT in TrenchStop? and Fieldstop technology with soft,

文件：516.07 Kbytes 頁數(shù)：16 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/k080a60z1/marking.html">K080A60Z1；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ? Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.067 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.17 mA)

文件：539.54 Kbytes 頁數(shù)：9 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k080e60z1/marking.html">K080E60Z1；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications ? Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.067 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.17 mA)

文件：544.16 Kbytes 頁數(shù)：9 Pages

TOSHIBA

東芝

絲印：K080N60Z1；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications ? Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.067 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.17 mA)

文件：542.65 Kbytes 頁數(shù)：9 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k080u60z1/marking.html">K080U60Z1；Package：TOLL；MOSFETs Silicon N-Channel MOS

Applications ? Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.067 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.17 mA)

文件：551.52 Kbytes 頁數(shù)：9 Pages

TOSHIBA

東芝

絲印：K080Z60Z1；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications ? Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.067 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.17 mA)

文件：565.54 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝

絲印：K08EET6；Package：PG-TO220-3FP；IGBT in trench and field-stop technology with soft, fast recovery anti-parallel Rapid diode

文件：2.05408 Mbytes 頁數(shù)：16 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/k08eet6/marking.html">K08EET6；Package：PG-TO252-3；IGBT in trench and field-stop technology with soft, fast recovery anti-parallel Rapid diode

文件：1.65022 Mbytes 頁數(shù)：16 Pages

INFINEON

英飛凌

絲印：K08T120；Package：PG-TO-247-3；IGBT in TrenchStop? and Fieldstop technology with soft,

文件：516.07 Kbytes 頁數(shù)：16 Pages

INFINEON

英飛凌