絲?。?strong>K06；Package：EMT6；1.8V Drive NchNch MOSFET

文件：108.6 Kbytes 頁(yè)數(shù)：4 Pages

ROHM

羅姆

絲印：K06；Package：EMT6；1.8V Drive NchNch MOSFET

文件：87.2 Kbytes 頁(yè)數(shù)：4 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/k065v65x2/marking.html">K065V65X2；Package：TO-247-3L；650V αSiC Silicon Carbide Power MOSFET

Features ? Proprietary αSiC MOSFET technology ? Low loss, fast switching speeds with low RG ? Optimized drive voltage (VGS =15V) for broad driver compatibility ? Robust body diode and low Qrr Applications ? Renewable ? Industrial ? EV Charger ? UPS ? Solar Inverters

文件：880.04 Kbytes 頁(yè)數(shù)：9 Pages

AOSMD

萬(wàn)國(guó)半導(dǎo)體

絲印：K06T60；Package：PG-TO220-3；IGBT in TRENCHSTOP? and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Features ? Very low VCE(sat) 1.5V (typ.) ? Maximum Junction Temperature 175°C ? Short circuit withstand time 5?s ? Designed for : - Variable Speed Drive for washing machines, air conditioners and induction cooking - Uninterrupted Power Supply ? TRENCHSTOP? and Fieldstop technology for 600V

文件：519.94 Kbytes 頁(yè)數(shù)：13 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/k063n60z1/marking.html">K063N60Z1；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications ? Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.053 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.47 mA)

文件：620.31 Kbytes 頁(yè)數(shù)：9 Pages

TOSHIBA

東芝

絲印：K063Z60Z1；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications ? Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.053 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.47 mA)

文件：644.14 Kbytes 頁(yè)數(shù)：10 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k065n65z/marking.html">K065N65Z；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications ? Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.054 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.69 mA)

文件：414.12 Kbytes 頁(yè)數(shù)：10 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k065u65z/marking.html">K065U65Z；Package：TOLL；MOSFETs Silicon N-Channel MOS

Applications ? Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.051 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.69 mA)

文件：492.89 Kbytes 頁(yè)數(shù)：10 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k065z65z/marking.html">K065Z65Z；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications ? Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.054 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.69 mA)

文件：413.84 Kbytes 頁(yè)數(shù)：10 Pages

TOSHIBA

東芝

絲印：K068N65Z5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.052 Ω (typ.) (3) High-speed switching properties with the lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 1.6

文件：499.2 Kbytes 頁(yè)數(shù)：10 Pages

TOSHIBA

東芝