Intel StrataFlash Embedded Memory

Introduction This document provides information about the Intel StrataFlash? Embedded Memory (P30) device and describes its features, operation, and specifications. Product Features ■ High performance — 85/88 ns initial access — 40 MHz with zero wait states, 20 ns clock-to data output

文件：1.60991 Mbytes 頁(yè)數(shù)：102 Pages

INTEL

英特爾

Intel StrataFlash Embedded Memory

Introduction This document provides information about the Intel StrataFlash? Embedded Memory (P30) device and describes its features, operation, and specifications. Product Features ■ High performance — 85/88 ns initial access — 40 MHz with zero wait states, 20 ns clock-to data output

文件：1.60991 Mbytes 頁(yè)數(shù)：102 Pages

INTEL

英特爾

Numonyx??Embedded Flash Memory (J3 v. D)

Introduction This document contains information pertaining to the Numonyx? Embedded Flash Memory (J3 v D) device features, operation, and specifications. Product Features ■ Architecture — Symmetrical 128-Kbyte blocks — 256 Mbit (256 blocks) — 128 Mbit (128 blocks) — 64 Mbit

文件：911.56 Kbytes 頁(yè)數(shù)：68 Pages

NUMONYX

Numonyx? Embedded Flash Memory (J3 65nm) Single Bit per Cell (SBC)

Features Architecture — Symmetrical 128-KB blocks — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks) — Blank Check to verify an erased block Performance — Initial Access Speed: 75ns — 25 ns 8-word Asynchronous page-mode reads — 256-Word write buffer for x16 mode, 256-

文件：776.1 Kbytes 頁(yè)數(shù)：67 Pages

NUMONYX

Numonyx??Embedded Flash Memory (J3 v. D)

Introduction This document contains information pertaining to the Numonyx? Embedded Flash Memory (J3 v D) device features, operation, and specifications. Product Features ■ Architecture — Symmetrical 128-Kbyte blocks — 256 Mbit (256 blocks) — 128 Mbit (128 blocks) — 64 Mbit

文件：911.56 Kbytes 頁(yè)數(shù)：68 Pages

NUMONYX

Numonyx? Embedded Flash Memory (J3 65nm) Single Bit per Cell (SBC)

Features Architecture — Symmetrical 128-KB blocks — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks) — Blank Check to verify an erased block Performance — Initial Access Speed: 75ns — 25 ns 8-word Asynchronous page-mode reads — 256-Word write buffer for x16 mode, 256-

文件：776.1 Kbytes 頁(yè)數(shù)：67 Pages

NUMONYX

Numonyx? Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)

Introduction This document contains information pertaining to the Numonyx? Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) device features, operation, and specifications. Unless otherwise indicated throughout the rest of this document, the Numonyx? Embedded Flash Memory (J3 65 nm) Sin

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MICRON

美光

Intel StrataFlash Embedded Memory

Introduction This document provides information about the Intel StrataFlash? Embedded Memory (P30) device and describes its features, operation, and specifications. Product Features ■ High performance — 85/88 ns initial access — 40 MHz with zero wait states, 20 ns clock-to data output

文件：1.60991 Mbytes 頁(yè)數(shù)：102 Pages

INTEL

英特爾

Intel StrataFlash Embedded Memory

Introduction This document provides information about the Intel StrataFlash? Embedded Memory (P30) device and describes its features, operation, and specifications. Product Features ■ High performance — 85/88 ns initial access — 40 MHz with zero wait states, 20 ns clock-to data output

文件：1.60991 Mbytes 頁(yè)數(shù)：102 Pages

INTEL

英特爾

Rad-hard 60 V, 0.6 A PNP transistor

Features ? Hermetic packages ? ESCC qualified ? 100 krad Description The 2N2907AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5202/001 specification and ava

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STMICROELECTRONICS

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