絲?。?a target="_blank" title="Marking" href="/jf2140/marking.html">JF2140；Package：SOIC；JFE2140 Ultra-Low Noise, Matched, Dual, Low-Gate Current, Discrete, Audio, N?Channel JFET

1 Features ? Ultra-low noise: – Voltage noise: ? 0.9 nV/√Hz at 1 kHz, IDS = 5 mA ? 1.1 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.6 fA/√Hz at 1 kHz ? Low VGS mismatch: 4 mV (max) ? Low gate current: 10 pA (max) ? Low input capacitance: 13 pF at VDS = 5 V ? High gate-to-drain and gate-

文件：2.51478 Mbytes 頁數(shù)：33 Pages

TI

德州儀器

絲印：JF2140；Package：SOIC；JFE2140 Ultra-Low Noise, Matched, Dual, Low-Gate Current, Discrete, Audio, N??hannel JFET

文件：2.01952 Mbytes 頁數(shù)：28 Pages

TI

德州儀器

Package：8-SOIC（0.154"，3.90mm 寬）；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - JFET 描述：DUAL, ULTRA-LOW NOISE, LOW GATE

TI

德州儀器

JFE2140 Ultra-Low Noise, Matched, Dual, Low-Gate Current, Discrete, Audio, N?Channel JFET

1 Features ? Ultra-low noise: – Voltage noise: ? 0.9 nV/√Hz at 1 kHz, IDS = 5 mA ? 1.1 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.6 fA/√Hz at 1 kHz ? Low VGS mismatch: 4 mV (max) ? Low gate current: 10 pA (max) ? Low input capacitance: 13 pF at VDS = 5 V ? High gate-to-drain and gate-

文件：2.51478 Mbytes 頁數(shù)：33 Pages

TI

德州儀器

HIGH VOLTAGE RECTIFIER ASSEMBLY

文件：107.05 Kbytes 頁數(shù)：2 Pages

MICROSEMI

美高森美

boxes and ancillary products

文件：3.51246 Mbytes 頁數(shù)：5 Pages

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