絲?。?a target="_blank" title="Marking" href="/2glw/marking.html">2GLW；Package：SOT-23；JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1 Features ? Ultra-low noise: – Voltage noise: ? 0.8 nV/√Hz at 1 kHz, IDS = 5 mA ? 0.9 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.8 fA/√Hz at 1 kHz ? Low gate current: 10 pA (max) ? Low input capacitance: 24 pF at VDS = 5 V ? High gate-to-drain and gate-to-source breakdown voltage: –4

文件：1.90725 Mbytes 頁數(shù)：29 Pages

TI

德州儀器

JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1 Features ? Ultra-low noise: – Voltage noise: ? 0.8 nV/√Hz at 1 kHz, IDS = 5 mA ? 0.9 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.8 fA/√Hz at 1 kHz ? Low gate current: 10 pA (max) ? Low input capacitance: 24 pF at VDS = 5 V ? High gate-to-drain and gate-to-source breakdown voltage: –4

文件：1.90725 Mbytes 頁數(shù)：29 Pages

TI

德州儀器

JFE150 Ultra-Low Noise, Low Gate Current, Audio, N-Channel JFET

文件：1.86478 Mbytes 頁數(shù)：25 Pages

TI

德州儀器

JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1 Features ? Ultra-low noise: – Voltage noise: ? 0.8 nV/√Hz at 1 kHz, IDS = 5 mA ? 0.9 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.8 fA/√Hz at 1 kHz ? Low gate current: 10 pA (max) ? Low input capacitance: 24 pF at VDS = 5 V ? High gate-to-drain and gate-to-source breakdown voltage: –4

文件：1.90725 Mbytes 頁數(shù)：29 Pages

TI

德州儀器